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Refinado por: Nome da Publicação: Japanese Journal Of Applied Physics remover idioma: Japonês remover nível superior: Recursos Online remover
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1
Basic study on estimation method of wall shear stress in common carotid artery using blood flow imaging
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Basic study on estimation method of wall shear stress in common carotid artery using blood flow imaging

Nagaoka, Ryo ; Ishikawa, Kazuma ; Mozumi, Michiya ; Cinthio, Magnus ; Hasegawa, Hideyuki

Japanese Journal of Applied Physics, 2020-07, Vol.59 (SK), p.SKKE16 [Periódico revisado por pares]

IOP Publishing

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2
Current status of Ga2O3 power devices
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Current status of Ga2O3 power devices

Higashiwaki, Masataka ; Murakami, Hisashi ; Kumagai, Yoshinao ; Kuramata, Akito

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12) [Periódico revisado por pares]

The Japan Society of Applied Physics

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3
Material science and device physics in SiC technology for high-voltage power devices
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Material science and device physics in SiC technology for high-voltage power devices

Kimoto, Tsunenobu

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4), p.40103-1-040103-27 [Periódico revisado por pares]

The Japan Society of Applied Physics

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4
Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6
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Magnetic anisotropy of the single-crystalline ferromagnetic insulator Cr2Ge2Te6

Zhang, Xiao ; Zhao, Yuelei ; Song, Qi ; Jia, Shuang ; Shi, Jing ; Han, Wei

Japanese Journal of Applied Physics, 2016-03, Vol.55 (3) [Periódico revisado por pares]

The Japan Society of Applied Physics

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5
Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices
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Artigo
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Evolution of corundum-structured III-oxide semiconductors: Growth, properties, and devices

Fujita, Shizuo ; Oda, Masaya ; Kaneko, Kentaro ; Hitora, Toshimi

Japanese Journal of Applied Physics, 2016-12, Vol.55 (12), p.1202 [Periódico revisado por pares]

The Japan Society of Applied Physics

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6
Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface
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Capacitance--Voltage Characteristics of Al2O3/AlGaN/GaN Structures and State Density Distribution at Al2O3/AlGaN Interface

Mizue, Chihoko ; Hori, Yujin ; Miczek, Marcin ; Hashizume, Tamotsu

Jpn J Appl Phys, 2011-02, Vol.50 (2), p.021001-021001-7 [Periódico revisado por pares]

The Japan Society of Applied Physics

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7
Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes
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Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes

Hirayama, Hideki ; Maeda, Noritoshi ; Fujikawa, Sachie ; Toyoda, Shiro ; Kamata, Norihiko

Japanese Journal of Applied Physics, 2014-10, Vol.53 (10), p.100209-1-100209-10 [Periódico revisado por pares]

The Japan Society of Applied Physics

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8
Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks
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Ferroelectricity of nondoped thin HfO2 films in TiN/HfO2/TiN stacks

Nishimura, Tomonori ; Xu, Lun ; Shibayama, Shigehisa ; Yajima, Takeaki ; Migita, Shinji ; Toriumi, Akira

Japanese Journal of Applied Physics, 2016-06, Vol.55 (8S2) [Periódico revisado por pares]

The Japan Society of Applied Physics

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9
Third-generation organic electroluminescence materials
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Third-generation organic electroluminescence materials

Adachi, Chihaya

Japanese Journal of Applied Physics, 2014-06, Vol.53 (6), p.60101-1-060101-11 [Periódico revisado por pares]

The Japan Society of Applied Physics

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10
Quenching effects for piezoelectric properties on lead-free (Bi1/2Na1/2)TiO3 ceramics
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Quenching effects for piezoelectric properties on lead-free (Bi1/2Na1/2)TiO3 ceramics

Muramatsu, Hiroki ; Nagata, Hajime ; Takenaka, Tadashi

Japanese Journal of Applied Physics, 2016-10, Vol.55 (10S) [Periódico revisado por pares]

The Japan Society of Applied Physics

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