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1 |
Material Type: Artigo
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Design of broadband high-efficiency superconducting-nanowire single photon detectorsRedaelli, L ; Bulgarini, G ; Dobrovolskiy, S ; Dorenbos, S N ; Zwiller, V ; Monroy, E ; Gérard, J MSuperconductor science & technology, 2016-06, Vol.29 (6), p.65016-65024 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Chemical stability and superconductivity in Ag-sheathed CaKFe4As4 superconducting tapesCheng, Zhe ; Dong, Chiheng ; Huang, He ; Liu, Shifa ; Zhu, Yanchang ; Wang, Dongliang ; Vlasko-Vlasov, Vitalii ; Welp, Ulrich ; Kwok, Wai-Kwong ; Ma, YanweiSuperconductor science & technology, 2018-11, Vol.32 (1) [Periódico revisado por pares]United States: IOP PublishingTexto completo disponível |
3 |
Material Type: Artigo
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An intermetallic powder-in-tube approach to increased flux-pinning in Nb3Sn by internal oxidation of ZrMotowidlo, L R ; Lee, P J ; Tarantini, C ; Balachandran, S ; Ghosh, A K ; Larbalestier, D CSuperconductor science & technology, 2017-11, Vol.31 (1) [Periódico revisado por pares]United States: IOP PublishingTexto completo disponível |
4 |
Material Type: Artigo
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Evaluation of critical current density and residual resistance ratio limits in powder in tube Nb3Sn conductorsSegal, Christopher ; Tarantini, Chiara ; Sung, Zu Hawn ; Lee, Peter J ; Sailer, Bernd ; Thoener, Manfred ; Schlenga, Klaus ; Ballarino, Amalia ; Bottura, Luca ; Bordini, Bernardo ; Scheuerlein, Christian ; Larbalestier, David CSuperconductor science & technology, 2016-06, Vol.29 (8) [Periódico revisado por pares]United States: IOP PublishingTexto completo disponível |
5 |
Material Type: Artigo
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Controllable surface contact resistance in solution-processed thin-film transistors due to dimension modificationMondal, SandipSemiconductor science and technology, 2020-10, Vol.35 (10), p.10 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
6 |
Material Type: Artigo
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Interlaboratory determination of the calibration factor for the measurement of the interstitial oxygen content of silicon by infrared absorptionBAGHDADI, A ; BULLIS, W. M ; CROARKIN, M. C ; YUE-ZHEN LI ; SCACE, R. I ; SERIES, R. W ; STALLHOFER, P ; WATANABE, MJournal of the Electrochemical Society, 2019-12, Vol.136 (7), p.2015-2024 [Periódico revisado por pares]Pennington, NJ: Electrochemical SocietyTexto completo disponível |
7 |
Material Type: Artigo
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Review of carbon nanotube nanoelectronics and macroelectronicsChe, Yuchi ; Chen, Haitian ; Gui, Hui ; Liu, Jia ; Liu, Bilu ; Zhou, ChongwuSemiconductor science and technology, 2014-07, Vol.29 (7), p.73001 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
8 |
Material Type: Artigo
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Shaping the spectrum of terahertz photoconductive antenna by frequency-dependent impedance modulationLavrukhin, D V ; Yachmenev, A E ; Pavlov, A Yu ; Khabibullin, R A ; Goncharov, Yu G ; Spektor, I E ; Komandin, G A ; Yurchenko, S O ; Chernomyrdin, N V ; Zaytsev, K I ; Ponomarev, D SSemiconductor science and technology, 2019-02, Vol.34 (3), p.34005 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
9 |
Material Type: Artigo
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In situ metal-organic chemical vapour deposition growth of III-V semiconductor nanowires in the Lund environmental transmission electron microscopeHetherington, Crispin ; Jacobsson, Daniel ; Dick, Kimberly A ; Wallenberg, L ReineSemiconductor science and technology, 2020-03, Vol.35 (3), p.34004 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
10 |
Material Type: Artigo
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A review on the recent developments of solution processes for oxide thin film transistorsAhn, Byung Du ; Jeon, Hye-Ji ; Sheng, Jiazhen ; Park, Jozeph ; Park, Jin-SeongSemiconductor science and technology, 2015-06, Vol.30 (6), p.64001 [Periódico revisado por pares]IOP PublishingTexto completo disponível |