Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
---|---|---|---|
11 |
Material Type: Ata de Congresso
|
![]() |
The Bi-mode Insulated Gate Transistor (BIGT) a potential technology for higher power applicationsRahimo, M. ; Kopta, A. ; Schlapbach, U. ; Vobecky, J. ; Schnell, R. ; Klaka, S.2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009, p.283-286IEEETexto completo disponível |
12 |
Material Type: Ata de Congresso
|
![]() |
The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodesKopta, A. ; Rahimo, M.Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005, 2005, p.83-86IEEETexto completo disponível |
13 |
Material Type: Ata de Congresso
|
![]() |
The radial layout design concept for the Bi-mode insulated gate transistorStorasta, L. ; Rahimo, M. ; Bellini, M. ; Kopta, A. ; Vemulapati, U. R. ; Kaminski, N.2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, 2011, p.56-59IEEETexto completo disponível |
14 |
Material Type: Ata de Congresso
|
![]() |
Limitation of the short-circuit ruggedness of high-voltage IGBTsKopta, A. ; Rahimo, M. ; Schlapbach, U. ; Kaminski, N. ; Silber, D.2009 21st International Symposium on Power Semiconductor Devices & IC's, 2009, p.33-36IEEETexto completo disponível |
15 |
Material Type: Artigo
|
![]() |
Characterization of 6.5 kV IGBTs for High-Power Medium-Frequency Soft-Switched ApplicationsDujic, Drazen ; Steinke, Gina K. ; Bellini, Marco ; Rahimo, Munaf ; Storasta, Liutauras ; Steinke, Juergen K.IEEE transactions on power electronics, 2014-02, Vol.29 (2), p.906-919 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
16 |
Material Type: Artigo
|
![]() |
Extraction of dynamic avalanche during IGBT turn offGeissmann, Silvan ; Michielis, L. De ; Corvasce, Ch ; Rahimo, M. ; Andenna, M.Microelectronics and reliability, 2017-09, Vol.76-77, p.495-499 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
17 |
Material Type: Artigo
|
![]() |
Capacitive effects in IGBTs limiting their reliability under short circuitReigosa, P.D. ; Iannuzzo, F. ; Rahimo, M. ; Blaabjerg, F.Microelectronics and reliability, 2017-09, Vol.76-77, p.485-489 [Periódico revisado por pares]Elsevier LtdTexto completo disponível |
18 |
Material Type: Ata de Congresso
|
![]() |
4.5kV press pack IGBT designed for ruggedness and reliabilityEicher, S. ; Rahimo, M. ; Tsyplakov, E. ; Schneider, D. ; Kopta, A. ; Schlapbach, U. ; Carroll, E.Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting, 2004, Vol.3, p.1534-1539 vol.3Piscataway NJ: IEEETexto completo disponível |
19 |
Material Type: Artigo
|
![]() |
Characterization of a n+3C/n-4H SiC heterojunction diodeMinamisawa, R.A ; Mihaila, A ; Farkas, I ; Teodorescu, V.S ; Afanas'ev, V.V ; Hsu, C.-W ; Janzen, E ; Rahimo, MApplied Physics Letters, 2016, Vol.108 (14), p.143502-1 [Periódico revisado por pares]MELVILLE: American Institute of PhysicsTexto completo disponível |
20 |
Material Type: Artigo
|
![]() |
Formation of Insulated-Gate Bipolar Transistor Highly Activated Anodes via Nickel Silicidation With Dopant SegregationMinamisawa, R. A. ; Papadopoulos, C. ; Jabrany, R. ; Knoll, L. ; Corvasce, C. ; Rahimo, M.IEEE electron device letters, 2015-05, Vol.36 (5), p.487-489 [Periódico revisado por pares]IEEETexto completo disponível |