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Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors
Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors
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Novel Approach Toward Plasma Enhancement in Trench-Insulated Gate Bipolar Transistors

Antoniou, M. ; Lophitis, N. ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M. ; Amaratunga, G. ; Udrea, F.

IEEE electron device letters, 2015-08, Vol.36 (8), p.823-825 [Periódico revisado por pares]

IEEE

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2
Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability
Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability
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Optimal Gate Commutated Thyristor Design for Bi-Mode Gate Commutated Thyristors Underpinning High, Temperature Independent, Current Controllability

Lophitis, N. ; Antoniou, M. ; Vemulapati, U. ; Vobecky, J. ; Badstuebner, U. ; Wikstroem, T. ; Stiasny, T. ; Rahimo, M. ; Udrea, F.

IEEE electron device letters, 2018-09, Vol.39 (9), p.1342-1345 [Periódico revisado por pares]

New York: IEEE

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3
New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop
New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop
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New Bi-Mode Gate-Commutated Thyristor Design Concept for High-Current Controllability and Low ON-State Voltage Drop

Lophitis, N. ; Antoniou, M. ; Vemulapati, U. ; Arnold, M. ; Nistor, I. ; Vobecky, J. ; Rahimo, M. ; Udrea, F.

IEEE electron device letters, 2016-04, Vol.37 (4), p.467-470 [Periódico revisado por pares]

New York: IEEE

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4
The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes
The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes
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The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes

Kopta, A. ; Rahimo, M.

Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005, 2005, p.83-86

IEEE

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5
Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses
Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses
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Experimental demonstration of the p-ring FS+ Trench IGBT concept: A new design for minimizing the conduction losses

Antoniou, M. ; Lophitis, N. ; Udrea, F. ; Bauer, F. ; Nistor, I. ; Bellini, M. ; Rahimo, M.

2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2015, p.21-24

IEEE

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6
Inherently soft free-wheeling diode for high temperature operation
Inherently soft free-wheeling diode for high temperature operation
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Inherently soft free-wheeling diode for high temperature operation

Matthias, S. ; Geissmann, S. ; Bellini, M. ; Kopta, A. ; Rahimo, M.

2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), 2013, p.335-338

IEEE

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7
The concept of Bi-mode Gate Commutated Thyristor-A new type of reverse conducting IGCT
The concept of Bi-mode Gate Commutated Thyristor-A new type of reverse conducting IGCT
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The concept of Bi-mode Gate Commutated Thyristor-A new type of reverse conducting IGCT

Vemulapati, U. ; Bellini, M. ; Arnold, M. ; Rahimo, M. ; Stiasny, T.

2012 24th International Symposium on Power Semiconductor Devices and ICs, 2012, p.29-32

IEEE

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