Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Donors and deep acceptors in β-Ga2O3Neal, Adam T. ; Mou, Shin ; Rafique, Subrina ; Zhao, Hongping ; Ahmadi, Elaheh ; Speck, James S. ; Stevens, Kevin T. ; Blevins, John D. ; Thomson, Darren B. ; Moser, Neil ; Chabak, Kelson D. ; Jessen, Gregg H.Applied physics letters, 2018-08, Vol.113 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
2 |
Material Type: Artigo
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High responsivity in molecular beam epitaxy grown β-Ga2O3 metal semiconductor metal solar blind deep-UV photodetectorSingh Pratiyush, Anamika ; Krishnamoorthy, Sriram ; Vishnu Solanke, Swanand ; Xia, Zhanbo ; Muralidharan, Rangarajan ; Rajan, Siddharth ; Nath, Digbijoy N.Applied physics letters, 2017-05, Vol.110 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
3 |
Material Type: Artigo
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Iron and intrinsic deep level states in Ga2O3Ingebrigtsen, M. E. ; Varley, J. B. ; Kuznetsov, A. Yu ; Svensson, B. G. ; Alfieri, G. ; Mihaila, A. ; Badstübner, U. ; Vines, L.Applied physics letters, 2018-01, Vol.112 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
4 |
Material Type: Artigo
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Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β- Ga2O3 solar-blind ultraviolet photodetectorsGuo, D. Y. ; Wu, Z. P. ; An, Y. H. ; Guo, X. C. ; Chu, X. L. ; Sun, C. L. ; Li, L. H. ; Li, P. G. ; Tang, W. H.Applied physics letters, 2014-07, Vol.105 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
5 |
Material Type: Artigo
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Fully epitaxial ferroelectric ScAlN grown by molecular beam epitaxyWang, Ping ; Wang, Ding ; Vu, Nguyen M. ; Chiang, Tony ; Heron, John T. ; Mi, ZetianApplied physics letters, 2021-05, Vol.118 (22) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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All-epitaxial, laterally structured plasmonic materialsSkipper, Alec M. ; Petluru, Priyanka ; Ironside, Daniel J. ; García, Ashlee M. ; Muhowski, Aaron J. ; Wasserman, Daniel ; Bank, Seth R.Applied physics letters, 2022-04, Vol.120 (16) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
7 |
Material Type: Artigo
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MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructuresIslam, S. M. ; Lee, Kevin ; Verma, Jai ; Protasenko, Vladimir ; Rouvimov, Sergei ; Bharadwaj, Shyam ; (Grace) Xing, Huili ; Jena, DebdeepApplied physics letters, 2017-01, Vol.110 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
8 |
Material Type: Artigo
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Thickness scaling down to 5 nm of ferroelectric ScAlN on CMOS compatible molybdenum grown by molecular beam epitaxyWang, Ding ; Wang, Ping ; Mondal, Shubham ; Hu, Mingtao ; Wang, Danhao ; Wu, Yuanpeng ; Ma, Tao ; Mi, ZetianApplied physics letters, 2023-01, Vol.122 (5) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
9 |
Material Type: Artigo
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High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/SiJung, Daehwan ; Norman, Justin ; Kennedy, M. J. ; Shang, Chen ; Shin, Bongki ; Wan, Yating ; Gossard, Arthur C. ; Bowers, John E.Applied physics letters, 2017-09, Vol.111 (12) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxyWang, Ding ; Wang, Ping ; Wang, Boyu ; Mi, ZetianApplied physics letters, 2021-09, Vol.119 (11) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |