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Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010) substrates
Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010) substrates
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Electrical properties of heavily Sn-doped (AlGa)2O3 layers on β-Ga2O3 (010) substrates

Okumura, Hironori

Japanese Journal of Applied Physics, 2021-06, Vol.60 (6) [Periódico revisado por pares]

Tokyo: IOP Publishing

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2
Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures
Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures
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Growth and Electrical Characterization of N-face AlGaN/GaN Heterostructures

Rajan, S. ; Wong, M. ; Fu, Y. ; Wu, F. ; Speck, J. S. ; Mishra, U. K.

Japanese Journal of Applied Physics, 2005-01, Vol.44 (11L), p.L1478 [Periódico revisado por pares]

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3
Effects of In composition on the surface morphology of self-assembled In x Ga1−x Sb/GaAs quantum dots
Effects of In composition on the surface morphology of self-assembled In x Ga1−x Sb/GaAs quantum dots
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Effects of In composition on the surface morphology of self-assembled In x Ga1−x Sb/GaAs quantum dots

Kawazu, Takuya

Japanese Journal of Applied Physics, 2022-05, Vol.61 (6) [Periódico revisado por pares]

IOP Publishing

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4
Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors
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Structural Properties of GaN Buffer Layers on 4H-SiC(0001) Grown by Plasma-Assisted Molecular Beam Epitaxy for High Electron Mobility Transistors

Waltereit, Patrick ; Poblenz, Christiane ; Rajan, Siddharth ; Wu, Feng ; Mishra, Umesh K. ; Speck, James S.

Japanese Journal of Applied Physics, 2004-12, Vol.43 (No. 12A), p.L1520-L1523 [Periódico revisado por pares]

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5
Effects of In composition on the surface morphology of self-assembled InxGa1−xSb/GaAs quantum dots
Effects of In composition on the surface morphology of self-assembled InxGa1−xSb/GaAs quantum dots
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Effects of In composition on the surface morphology of self-assembled InxGa1−xSb/GaAs quantum dots

Kawazu, Takuya

Japanese Journal of Applied Physics, 2022-06, Vol.61 (6), p.065503 [Periódico revisado por pares]

Tokyo: Japanese Journal of Applied Physics

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6
Recent progress on antimonene: from theoretical calculation to epitaxial growth
Recent progress on antimonene: from theoretical calculation to epitaxial growth
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Recent progress on antimonene: from theoretical calculation to epitaxial growth

Xue, Cheng-Long ; Li, Shao-Chun

Japanese Journal of Applied Physics, 2021-09, Vol.60 (SE), p.SE0805 [Periódico revisado por pares]

Tokyo: IOP Publishing

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7
Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements
Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements
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Real-time observation of liquid-gallium ordering on epitaxially-grown GaN(0001) by X-ray scattering measurements

SASAKI, Takuo ; Iwata, Takuya ; Sugitani, Kanya ; TAKAHASI, Masamitu

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.020901 [Periódico revisado por pares]

Tokyo: Japanese Journal of Applied Physics

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8
Thermodynamic analysis of β-Ga2O3 growth by molecular beam epitaxy
Thermodynamic analysis of β-Ga2O3 growth by molecular beam epitaxy
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Thermodynamic analysis of β-Ga2O3 growth by molecular beam epitaxy

Togashi, Rie ; Ishida, Haruka ; Goto, Ken ; Higashiwaki, Masataka ; Kumagai, Yoshinao

Japanese Journal of Applied Physics, 2023-01, Vol.62 (1), p.015501 [Periódico revisado por pares]

Tokyo: IOP Publishing

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9
Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy
Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy
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Pseudomorphic growth of Si-doped α-(AlGa)2O3 on m-plane α-Al2O3 substrates by molecular beam epitaxy

Okumura, Hironori

Japanese Journal of Applied Physics, 2023-06, Vol.62 (6), p.065504 [Periódico revisado por pares]

Tokyo: IOP Publishing

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10
Plasma-excited MBE—proposal and achievements through R&D of compound semiconductor materials and devices
Plasma-excited MBE—proposal and achievements through R&D of compound semiconductor materials and devices
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Plasma-excited MBE—proposal and achievements through R&D of compound semiconductor materials and devices

Nanishi, Yasushi ; Yamaguchi, Tomohiro

Japanese Journal of Applied Physics, 2022-01, Vol.61 (SA), p.SA0810 [Periódico revisado por pares]

Tokyo: IOP Publishing

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