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Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy
Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy
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Growth of GaAs1–xBix Layers by Molecular-Beam Epitaxy

Semyagin, B. R. ; Kolesnikov, A. V. ; Putyato, M. A. ; Preobrazhenskii, V. V. ; Popova, T. B. ; Ushanov, V. I. ; Chaldyshev, V. V.

Semiconductors (Woodbury, N.Y.), 2023-09, Vol.57 (9), p.405-409 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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2
Specific Features of Structural Stresses in InGaN/GaN Nanowires
Specific Features of Structural Stresses in InGaN/GaN Nanowires
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Specific Features of Structural Stresses in InGaN/GaN Nanowires

Soshnikov, I. P. ; Kotlyar, K. P. ; Reznik, R. R. ; Gridchin, V. O. ; Lendyashova, V. V. ; Vershinin, A. V. ; Lysak, V. V. ; Kirilenko, D. A. ; Bert, N. A. ; Cirlin, G. E.

Semiconductors (Woodbury, N.Y.), 2021-10, Vol.55 (10), p.795-798 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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3
Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots
Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots
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Investigation of Photoluminescence in the InGaAs/GaAs System with 1100-nm Range Quantum Dots

Babichev, A. V. ; Komarov, S. D. ; Tkach, Yu. S. ; Nevedomskiy, V. N. ; Blokhin, S. A. ; Kryzhanovskaya, N. V. ; Gladyshev, A. G. ; Karachinsky, L. Ya ; Novikov, I. I.

Semiconductors (Woodbury, N.Y.), 2023-02, Vol.57 (2), p.93-99 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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4
3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K
3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K
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3.3 THz Quantum Cascade Laser Based on a Three GaAs/AlGaAs Quantum-Well Active Module with an Operating Temperature above 120 K

Khabibullin, R. A. ; Maremyanin, K. V. ; Ponomarev, D. S. ; Galiev, R. R. ; Zaycev, A. A. ; Danilov, A. I. ; Vasil’evskii, I. S. ; Vinichenko, A. N. ; Klochkov, A. N. ; Afonenko, A. A. ; Ushakov, D. V. ; Morozov, S. V. ; Gavrilenko, V. I.

Semiconductors (Woodbury, N.Y.), 2022-02, Vol.56 (2), p.71-77 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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5
Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs
Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs
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Comparison of III–V Heterostructures Grown on Ge/Si, Ge/SOI, and GaAs

Sushkov, A. A. ; Pavlov, D. A. ; Andrianov, A. I. ; Shengurov, V. G. ; Denisov, S. A. ; Chalkov, V. Yu ; Kriukov, R. N. ; Baidus, N. V. ; Yurasov, D. V. ; Rykov, A. V.

Semiconductors (Woodbury, N.Y.), 2022-02, Vol.56 (2), p.122-133 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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6
Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy
Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy
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Investigation of Built-in Electric Fields at the GaSe/GaAs Interface by Photoreflectance Spectroscopy

Komkov, O. S. ; Khakhulin, S. A. ; Firsov, D. D. ; Avdienko, P. S. ; Sedova, I. V. ; Sorokin, S. V.

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1198-1204 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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7
1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy
1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy
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1.55-μm-Range Vertical-Cavity Surface-Emitting Lasers, Manufactured by Wafer Fusion of Heterostructures Grown by Solid-Source Molecular-Beam Epitaxy

Blokhin, S. A. ; Nevedomsky, S. N. ; Bobrov, M. A. ; Maleev, N. A. ; Blokhin, A. A. ; Kuzmenkov, A. G. ; Vasyl’ev, A. P. ; Rohas, S. S. ; Babichev, A. V. ; Gladyshev, A. G. ; Novikov, I. I. ; Karachinsky, L. Ya ; Denisov, D. V. ; Voropaev, K. O. ; Ionov, A. S. ; Egorov, A. Yu ; Ustinov, V. M.

Semiconductors (Woodbury, N.Y.), 2020-10, Vol.54 (10), p.1276-1283 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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8
Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy
Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy
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Formation of Hexagonal Germanium on AlGaAs Nanowire Surfaces by Molecular-Beam Epitaxy

Ilkiv, I. V. ; Kotlyar, K. P. ; Kirilenko, D. A. ; Osipov, A. V. ; Soshnikov, I. P. ; Terpitsky, A. N. ; Cirlin, G. E.

Semiconductors (Woodbury, N.Y.), 2021-08, Vol.55 (8), p.678-681 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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9
Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation
Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation
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Development and Study of the p–i–n GaAs/AlGaAs Tunnel Diodes for Multijunction Converters of High-Power Laser Radiation

Kalinovskii, V. S. ; Kontrosh, E. V. ; Klimko, G. V. ; Ivanov, S. V. ; Yuferev, V. S. ; Ber, B. Y. ; Kazantsev, D. Y. ; Andreev, V. M.

Semiconductors (Woodbury, N.Y.), 2020-03, Vol.54 (3), p.355-361 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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10
Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy
Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy
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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

Abramkin, D. S. ; Petrushkov, M. O. ; Emelyanov, E. A. ; Nenashev, A. V. ; Yesin, M. Yu ; Vasev, A. V. ; Putyato, M. A. ; Bogomolov, D. B. ; Gutakovskiy, A. K. ; Preobrazhenskiy, V. V.

Semiconductors (Woodbury, N.Y.), 2021-02, Vol.55 (2), p.194-201 [Periódico revisado por pares]

Moscow: Pleiades Publishing

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