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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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| 1 |
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Substrate Terrace Width Dependence of Direct Growth of GaN on ScAlMgO4 by Radio‐Frequency Molecular Beam EpitaxyWada, Yuichi ; Deura, Momoko ; Kuroda, Yuya ; Goto, Naoki ; Kayamoto, Seiya ; Fujii, Takashi ; Mouri, Shinichiro ; Araki, Tsutomuphysica status solidi (b), 2023-07, Vol.260 (7), p.n/a [Peer Reviewed Journal]Full text available |
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Kinetically limited growth of GaAsBi by molecular-beam epitaxyPtak, A.J. ; France, R. ; Beaton, D.A. ; Alberi, K. ; Simon, J. ; Mascarenhas, A. ; Jiang, C.-S.Journal of crystal growth, 2012, Vol.338 (1), p.107-110 [Peer Reviewed Journal]Amsterdam: Elsevier B.VFull text available |
| 3 |
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Self-induced growth of GaN nanowires by molecular beam epitaxy: A critical review of the formation mechanismsConsonni, V.Physica status solidi. PSS-RRL. Rapid research letters, 2013-10, Vol.7 (10), p.699-712 [Peer Reviewed Journal]Berlin: WILEY-VCH VerlagFull text available |
| 4 |
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MBE grown Ga2O3 and its power device applicationsSasaki, Kohei ; Higashiwaki, Masataka ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuJournal of crystal growth, 2013-09, Vol.378, p.591-595 [Peer Reviewed Journal]Amsterdam: Elsevier B.VFull text available |
| 5 |
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AlGaN/GaN/AlGaN DH‐HEMTs Grown on a Patterned Silicon SubstrateComyn, Rémi ; Chenot, Sébastien ; Alouani, Wissam El ; Nemoz, Maud ; Frayssinet, Eric ; Damilano, Benjamin ; Cordier, YvonPhysica status solidi. A, Applications and materials science, 2018-05, Vol.215 (9), p.n/a [Peer Reviewed Journal]Weinheim: Wiley Subscription Services, IncFull text available |
| 6 |
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Plasma-assisted molecular beam epitaxy growth diagram of InGaN on (0001)GaN for the optimized synthesis of InGaN compositional gradesHestroffer, Karine ; Lund, Cory ; Li, Haoran ; Keller, Stacia ; Speck, James S. ; Mishra, Umesh K.Physica Status Solidi. B: Basic Solid State Physics, 2016-04, Vol.253 (4), p.626-629 [Peer Reviewed Journal]Blackwell Publishing LtdFull text available |
| 7 |
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Reduction of rotational twin formation by indium pre-evaporation in epitaxially grown GaAs films on Si (111) substrateSuzuki, Hidetoshi ; Ito, Daiki ; Fukuyama, Atsuhiko ; Ikari, TetsuoJournal of crystal growth, 2013-10, Vol.380, p.148-152 [Peer Reviewed Journal]Amsterdam: Elsevier B.VFull text available |
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Coalescence of a-plane GaN stripes in low angle incidence microchannel epitaxy by ammonia-based metal-organic molecular beam epitaxyNaritsuka, S. ; Lin, C.H. ; Uchiyama, S. ; Maruyama, T.Journal of crystal growth, 2013-09, Vol.378, p.303-306 [Peer Reviewed Journal]Amsterdam: Elsevier B.VFull text available |
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Energy-decreasing exponential time differencing Runge–Kutta methods for phase-field modelsFu, Zhaohui ; Yang, JiangJournal of computational physics, 2022-04, Vol.454, p.110943, Article 110943 [Peer Reviewed Journal]Cambridge: Elsevier IncFull text available |
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Ga-assisted MBE growth of GaAs nanowires using thin HSQ layerRieger, Torsten ; Heiderich, Sonja ; Lenk, Steffi ; Lepsa, Mihail Ion ; Grützmacher, DetlevJournal of crystal growth, 2012-08, Vol.353 (1), p.39-46 [Peer Reviewed Journal]Amsterdam: Elsevier B.VFull text available |
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