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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 11 |
Material Type: Artigo
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Molecular beam epitaxy of BaSi2 thin films on Si(001) substratesToh, Katsuaki ; Hara, Kosuke O. ; Usami, Noritaka ; Saito, Noriyuki ; Yoshizawa, Noriko ; Toko, Kaoru ; Suemasu, TakashiJournal of crystal growth, 2012-04, Vol.345 (1), p.16-21 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 12 |
Material Type: Artigo
|
|
Antiferromagnetic order in MnBi2Te4 films grown on Si(1 1 1) by molecular beam epitaxyLiu, N. ; Schreyeck, S. ; Fijalkowski, K.M. ; Kamp, M. ; Brunner, K. ; Gould, C. ; Molenkamp, L.W.Journal of crystal growth, 2022-08, Vol.591, p.126677, Article 126677 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 13 |
Material Type: Artigo
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Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growthKaufmann, Nils. A.K. ; Lahourcade, L. ; Hourahine, B. ; Martin, D. ; Grandjean, N.Journal of crystal growth, 2016-01, Vol.433, p.36-42 [Periódico revisado por pares]Elsevier B.VTexto completo disponível |
| 14 |
Material Type: Artigo
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Laser molecular beam epitaxy growth of porous GaN nanocolumn and nanowall network on sapphire (0001) for high responsivity ultraviolet photodetectorsRamesh, Ch ; Tyagi, P. ; Bhattacharyya, Biplab ; Husale, Sudhir ; Maurya, K.K. ; Kumar, M. Senthil ; Kushvaha, S.S.Journal of alloys and compounds, 2019-01, Vol.770, p.572-581 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
| 15 |
Material Type: Artigo
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Defects limitation in epitaxial GaP on bistepped Si surface using UHVCVD–MBE growth clusterQuinci, T. ; Kuyyalil, J. ; Thanh, T. Nguyen ; Wang, Y. Ping ; Almosni, S. ; Létoublon, A. ; Rohel, T. ; Tavernier, K. ; Chevalier, N. ; Dehaese, O. ; Boudet, N. ; Bérar, J.F. ; Loualiche, S. ; Even, J. ; Bertru, N. ; Corre, A. Le ; Durand, O. ; Cornet, C.Journal of crystal growth, 2013-10, Vol.380, p.157-162 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 16 |
Material Type: Artigo
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Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE)Camacho-Reynoso, M. ; Hernández-Gutiérrez, C.A. ; Yee-Rendón, C.M. ; Rivera-Rodríguez, C. ; Bahena-Uribe, D. ; Gallardo-Hernández, S. ; Kudriavtsev, Yuriy ; López-López, M. ; Casallas-Moreno, Y.L.Journal of alloys and compounds, 2022-11, Vol.921, p.165994, Article 165994 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
| 17 |
Material Type: Artigo
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Antiphase domain annihilation during growth of GaP on Si by molecular beam epitaxyLin, Angie C. ; Fejer, M.M. ; Harris, James S.Journal of crystal growth, 2013-01, Vol.363, p.258-263 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 18 |
Material Type: Artigo
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Non-stoichiometric GaAsBi/GaAs (100) molecular beam epitaxy growthBastiman, F. ; Mohmad, A.R.B. ; Ng, J.S. ; David, J.P.R ; Sweeney, S.J.Journal of crystal growth, 2012, Vol.338 (1), p.57-61 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 19 |
Material Type: Artigo
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Controlled wurtzite inclusions in self-catalyzed zinc blende III–V semiconductor nanowiresRieger, Torsten ; Lepsa, Mihail Ion ; Schäpers, Thomas ; Grützmacher, DetlevJournal of crystal growth, 2013-09, Vol.378, p.506-510 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 20 |
Material Type: Artigo
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Growth conditions and structural properties of ZnMgO nanocolumns on Si(111)Pietrzyk, M.A. ; Stachowicz, M. ; Wierzbicka, A. ; Dluzewski, P. ; Jarosz, D. ; Przezdziecka, E. ; Kozanecki, A.Journal of crystal growth, 2014-12, Vol.408, p.102-106 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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