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Physics and Applications of Quantum Wells and Superlattices
Physics and Applications of Quantum Wells and Superlattices
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Physics and Applications of Quantum Wells and Superlattices

Mendez, E.E ; Klitzing, K. von

New York, NY: Springer 1987

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2
Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation
Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation
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Direct imaging of surface cusp evolution during strained-layer epitaxy and implications for strain relaxation

JESSON, D. E ; PENNYCOOK, S. J ; BARIBEAU, J.-M ; HOUGHTON, D. C

Physical review letters, 1993-09, Vol.71 (11), p.1744-1747 [Periódico revisado por pares]

Ridge, NY: American Physical Society

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3
Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy : growth kinetics, microstructure, and properties
Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy : growth kinetics, microstructure, and properties
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Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy : growth kinetics, microstructure, and properties

POWELL, R. C ; LEE, N.-E ; KIM, Y.-W ; GREENE, J. E

Journal of applied physics, 1993, Vol.73 (1), p.189-204 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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4
Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization
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Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization

Jewell, J.L. ; Harbison, J.P. ; Scherer, A. ; Lee, Y.H. ; Florez, L.T.

IEEE journal of quantum electronics, 1991-06, Vol.27 (6), p.1332-1346 [Periódico revisado por pares]

New York, NY: IEEE

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5
The mechanism of self-limiting growth of atomic layer epitaxy of GaAs by metalorganic molecular beam epitaxy using trimethylgallium and arsine
The mechanism of self-limiting growth of atomic layer epitaxy of GaAs by metalorganic molecular beam epitaxy using trimethylgallium and arsine
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The mechanism of self-limiting growth of atomic layer epitaxy of GaAs by metalorganic molecular beam epitaxy using trimethylgallium and arsine

WATANABE, A ; ISU, T ; HATA, M ; KAMIJOH, T ; KATAYAMA, Y

Japanese Journal of Applied Physics, 1989-07, Vol.28 (7), p.L1080-L1082 [Periódico revisado por pares]

Tokyo: Japanese journal of applied physics

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6
GaN grown on hydrogen plasma cleaned 6H-SiC substrates
GaN grown on hydrogen plasma cleaned 6H-SiC substrates
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GaN grown on hydrogen plasma cleaned 6H-SiC substrates

LIN, M. E ; STRITE, S ; AGARWAL, A ; SALVADOR, A ; ZHOU, G. L ; TERAGUCHI, N ; ROCKETT, A ; MORKOC, H

Applied physics letters, 1993-02, Vol.62 (7), p.702-704 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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7
ATOMIC LAYER CONTROL OF SRCUOX AND LAYER-BY-LAYER GROWTH OF BI2SR2CAN-1CUNO2N+4 (N = 1 TO 5) ON SRTIO3 (100) BY LASER MOLECULAR-BEAM-EPITAXY
ATOMIC LAYER CONTROL OF SRCUOX AND LAYER-BY-LAYER GROWTH OF BI2SR2CAN-1CUNO2N+4 (N = 1 TO 5) ON SRTIO3 (100) BY LASER MOLECULAR-BEAM-EPITAXY
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ATOMIC LAYER CONTROL OF SRCUOX AND LAYER-BY-LAYER GROWTH OF BI2SR2CAN-1CUNO2N+4 (N = 1 TO 5) ON SRTIO3 (100) BY LASER MOLECULAR-BEAM-EPITAXY

KANAI, M ; KAWAI, T ; KAWAI, S

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1992, Vol.31 (3B), p.L331-L333 [Periódico revisado por pares]

MINATO-KU TOKYO: JAPAN J APPLIED PHYSICS

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8
Direct injection supersonic cluster beam source for FT‐ICR studies of clusters
Direct injection supersonic cluster beam source for FT‐ICR studies of clusters
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Direct injection supersonic cluster beam source for FT‐ICR studies of clusters

Maruyama, Shigeo ; Anderson, Lila R. ; Smalley, Richard E.

Review of scientific instruments, 1990-12, Vol.61 (12), p.3686-3693 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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9
Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures
Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures
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Structural properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures

KAMINSKA, M ; LILIENTAL-WEBER, Z ; WEBER, E. R ; GEORGE, T ; KORTRIGHT, J. B ; SMITH, F. W ; TSAUR, B.-Y ; CALAWA, A. R

Applied physics letters, 1989-05, Vol.54 (19), p.1881-1883 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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10
Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon
Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon
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Molecular beam epitaxy growth of epitaxial barium silicide, barium oxide, and barium titanate on silicon

MCKEE, R. A ; WALKER, F. J ; CONNER, J. R ; SPECHT, E. D ; ZELMON, D. E

Applied physics letters, 1991-08, Vol.59 (7), p.782-784 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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