Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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Quantum dot lasers grown by gas source molecular-beam epitaxyGong, Q. ; Chen, P. ; Li, S.G. ; Lao, Y.F. ; Cao, C.F. ; Xu, C.F. ; Zhang, Y.G. ; Feng, S.L. ; Ma, C.H. ; Wang, H.L.Journal of crystal growth, 2011-05, Vol.323 (1), p.450-453 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Pseudomorphic growth and strain relaxation of α-Zn3P2 on GaAs(001) by molecular beam epitaxyBosco, Jeffrey P. ; Kimball, Gregory M. ; Lewis, Nathan S. ; Atwater, Harry A.Journal of crystal growth, 2013-01, Vol.363, p.205-210 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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3 |
Material Type: Artigo
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X-ray study of antiphase domains and their stability in MBE grown GaP on SiLétoublon, A. ; Guo, W. ; Cornet, C. ; Boulle, A. ; Véron, M. ; Bondi, A. ; Durand, O. ; Rohel, T. ; Dehaese, O. ; Chevalier, N. ; Bertru, N. ; Le Corre, A.Journal of crystal growth, 2011-05, Vol.323 (1), p.409-412 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Rock-salt Zn1−xMgxO epilayer having high Zn content grown on MgO (100) substrate by plasma-assisted molecular beam epitaxyLu, C.-Y.J. ; Yan, T. ; Chang, L. ; Ploog, K.H. ; Chou, M.M.C. ; Chiang, C.-M.Journal of crystal growth, 2013-09, Vol.378, p.168-171 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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5 |
Material Type: Artigo
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p-type non-polar m-plane ZnO films grown by plasma-assisted molecular beam epitaxyDing, P. ; Pan, X.H. ; Huang, J.Y. ; He, H.P. ; Lu, B. ; Zhang, H.H. ; Ye, Z.Z.Journal of crystal growth, 2011-09, Vol.331 (1), p.15-17 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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6 |
Material Type: Artigo
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Ab initio-based approach to novel behavior of InAs wetting layer surface grown on GaAs(001)Ito, Tomonori ; Hirai, Kentaro ; Akiyama, Toru ; Nakamura, KohjiJournal of crystal growth, 2013-09, Vol.378, p.13-16 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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7 |
Material Type: Artigo
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Growth and characterization of InGaN by RF-MBEKraus, A. ; Hammadi, S. ; Hisek, J. ; Buß, R. ; Jönen, H. ; Bremers, H. ; Rossow, U. ; Sakalauskas, E. ; Goldhahn, R. ; Hangleiter, A.Journal of crystal growth, 2011-05, Vol.323 (1), p.72-75 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Surface evolution of NaCl-type cubic AlN films on MgO (100) substrates deposited by laser molecular beam epitaxyFu, Yuechun ; Zhang, Yao ; Yang, Weijia ; He, Huan ; Shen, XiaomingJournal of crystal growth, 2012-03, Vol.343 (1), p.28-32 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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9 |
Material Type: Artigo
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Interface engineering for improved growth of GaSb on Si(111)Proessdorf, Andre ; Grosse, Frank ; Romanyuk, Oleksandr ; Braun, Wolfgang ; Jenichen, Bernd ; Trampert, Achim ; Riechert, HenningJournal of crystal growth, 2011-05, Vol.323 (1), p.401-404 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Growth of high-quality CuCl thin films by a technique involving electron-beam irradiationIchimiya, Masayoshi ; Le Quang, Phuong ; Ashida, Masaaki ; Itoh, TadashiJournal of crystal growth, 2013-09, Vol.378, p.372-375 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |