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Material Type: Ata de Congresso
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Responsivity and electrical characteristics of GaN based Schottky barrier UV detectors with transparent electrode in the near UV and VUV regionMotogaito, A. ; Ohta, K. ; Watanabe, H. ; Hiramatsu, K. ; Ohuchi, Y. ; Tadatomo, K. ; Hamamura, Y. ; Fukui, K.2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601), 2002, p.107-110IEEETexto completo disponível |