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Material Type: Artigo
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Guest Editorial: The dawn of gallium oxide microelectronicsHigashiwaki, Masataka ; Jessen, Gregg H.Applied physics letters, 2018-02, Vol.112 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Oxygen vacancies: The (in)visible friend of oxide electronicsGunkel, F. ; Christensen, D. V. ; Chen, Y. Z. ; Pryds, N.Applied physics letters, 2020-03, Vol.116 (12) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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1-kV vertical Ga2O3 field-plated Schottky barrier diodesKonishi, Keita ; Goto, Ken ; Murakami, Hisashi ; Kumagai, Yoshinao ; Kuramata, Akito ; Yamakoshi, Shigenobu ; Higashiwaki, MasatakaApplied physics letters, 2017-03, Vol.110 (10) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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On-demand generation of background-free single photons from a solid-state sourceSchweickert, Lucas ; Jöns, Klaus D. ; Zeuner, Katharina D. ; Covre da Silva, Saimon Filipe ; Huang, Huiying ; Lettner, Thomas ; Reindl, Marcus ; Zichi, Julien ; Trotta, Rinaldo ; Rastelli, Armando ; Zwiller, ValApplied physics letters, 2018-02, Vol.112 (9) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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The efficiency limit of CH3NH3PbI3 perovskite solar cellsSha, Wei E. I. ; Ren, Xingang ; Chen, Luzhou ; Choy, Wallace C. H.Applied physics letters, 2015-06, Vol.106 (22) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Revisiting lattice thermal transport in PbTe: The crucial role of quartic anharmonicityXia, YiApplied physics letters, 2018-08, Vol.113 (7) [Periódico revisado por pares]United States: American Institute of Physics (AIP)Texto completo disponível |
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Material Type: Artigo
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Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistorsGong, Cheng ; Zhang, Hengji ; Wang, Weihua ; Colombo, Luigi ; Wallace, Robert M. ; Cho, KyeongjaeApplied physics letters, 2013-07, Vol.103 (5) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Evolution of ferroelectric HfO2 in ultrathin region down to 3 nmTian, Xuan ; Shibayama, Shigehisa ; Nishimura, Tomonori ; Yajima, Takeaki ; Migita, Shinji ; Toriumi, AkiraApplied physics letters, 2018-03, Vol.112 (10) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Carbon dimer defect as a source of the 4.1 eV luminescence in hexagonal boron nitrideMackoit-Sinkevičienė, M. ; Maciaszek, M. ; Van de Walle, C. G. ; Alkauskas, A.Applied physics letters, 2019-11, Vol.115 (21) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Active materials by four-dimension printingGe, Qi ; Qi, H. Jerry ; Dunn, Martin L.Applied physics letters, 2013-09, Vol.103 (13), p.131901 [Periódico revisado por pares]Texto completo disponível |