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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses
Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses
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Physical understanding of different drain-induced-barrier-lowering variations in high-k/metal gate n-channel metal-oxide-semiconductor-field-effect-transistors induced by charge trapping under normal and reverse channel hot carrier stresses

Luo, Weichun ; Yang, Hong ; Wang, Wenwu ; Zhao, Lichuan ; Xu, Hao ; Ren, Shangqing ; Tang, Bo ; Tang, Zhaoyun ; Xu, Yefeng ; Xu, Jing ; Yan, Jiang ; Zhao, Chao ; Chen, Dapeng ; Ye, Tianchun

Applied physics letters, 2013-10, Vol.103 (18) [Periódico revisado por pares]

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2
Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers
Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers
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Lateral charge carrier transport properties of B-10 enriched hexagonal BN thick epilayers

Grenadier, S. ; Maity, A. ; Li, J. ; Lin, J. Y. ; Jiang, H. X.

Applied physics letters, 2019-08, Vol.115 (7) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency
Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency
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Impact of carrier recombination on fill factor for large area heterojunction crystalline silicon solar cell with 25.1% efficiency

Adachi, Daisuke ; Hernández, José Luis ; Yamamoto, Kenji

Applied physics letters, 2015-12, Vol.107 (23) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers
Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers
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Strong contact resistance effects on vertical carrier density profile and surface trap density in WSe2 multilayers

Choi, Dahyun ; Chae, Minji ; Han, Yeongseo ; Joo, Min-Kyu

Applied physics letters, 2024-02, Vol.124 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Reverse distribution of self-driven photocurrent response hotspots in layer-dependent MoS2 devices
Reverse distribution of self-driven photocurrent response hotspots in layer-dependent MoS2 devices
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Reverse distribution of self-driven photocurrent response hotspots in layer-dependent MoS2 devices

Yuan, Youneng ; Xin, Rui ; Huang, Zhengdong ; Huang, Zhaoyang ; Xia, Hui ; Li, Tianxin

Applied physics letters, 2024-05, Vol.124 (22) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
Simultaneous enhancement of carrier mobility and concentration via tailoring of Al-chemical states in Al-ZnO thin films
Simultaneous enhancement of carrier mobility and concentration via tailoring of Al-chemical states in Al-ZnO thin films
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Simultaneous enhancement of carrier mobility and concentration via tailoring of Al-chemical states in Al-ZnO thin films

Kumar, Manish ; Wen, Long ; Sahu, Bibhuti B. ; Han, Jeon Geon

Applied physics letters, 2015-06, Vol.106 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
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Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

Dauber, Jan ; Sagade, Abhay A. ; Oellers, Martin ; Watanabe, Kenji ; Taniguchi, Takashi ; Neumaier, Daniel ; Stampfer, Christoph

Applied physics letters, 2015-05, Vol.106 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process
High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process
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High-efficiency electroluminescence devices containing Si nanocrystals/SiC multilayers via improved carrier injection and recombination process

Sun, Teng ; Wang, Yuhao ; Han, Junnan ; Chen, Jiaming ; Zhu, Ting ; Li, Dongke ; Li, Wei ; Xu, Jun ; Chen, Kunji

Applied physics letters, 2024-07, Vol.125 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Enhanced thermoelectric performance of MoSe2 under high pressure and high temperature by suppressing bipolar effect
Enhanced thermoelectric performance of MoSe2 under high pressure and high temperature by suppressing bipolar effect
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Enhanced thermoelectric performance of MoSe2 under high pressure and high temperature by suppressing bipolar effect

Wang, Dianzhen ; You, Cun ; Ge, Yufei ; Wang, Fei ; Wang, Xinglin ; Liang, Xiao ; Zhou, Qiang ; Tao, Qiang ; Chen, Yanli ; Zhu, Pinwen

Applied physics letters, 2024-07, Vol.125 (1) [Periódico revisado por pares]

Melville: American Institute of Physics

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