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Material Type: Artigo
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Low frequency noise and trap density in GaN/AlGaN field effect transistorsSai, P. ; Jorudas, J. ; Dub, M. ; Sakowicz, M. ; Jakštas, V. ; But, D. B. ; Prystawko, P. ; Cywinski, G. ; Kašalynas, I. ; Knap, W. ; Rumyantsev, S.Applied physics letters, 2019-10, Vol.115 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |