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Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon
Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon
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Hydrogen and deuterium incorporation and transport in hafnium-based dielectric films on silicon

Pezzi, R. P. ; Miotti, L. ; Bastos, K. P. ; Soares, G. V. ; Driemeier, C. ; Baumvol, I. J. R. ; Punchaipetch, P. ; Pant, G. ; Gnade, B. E. ; Wallace, R. M. ; Rotondaro, A. ; Visokay, J. M. ; Chambers, J. J. ; Colombo, L.

Applied physics letters, 2004-10, Vol.85 (16), p.3540-3542 [Periódico revisado por pares]

United States

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2
Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si
Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si
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Effects of post-deposition annealing in O2 on the electrical characteristics of LaAlO3 films on Si

Miotti, L. ; Bastos, K. P. ; Driemeier, C. ; Edon, V. ; Hugon, M. C. ; Agius, B. ; Baumvol, I. J. R.

Applied physics letters, 2005-07, Vol.87 (2) [Periódico revisado por pares]

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3
Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy
Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy
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Optical investigation of atomic steps in ultrathin InGaAs/InP quantum wells grown by vapor levitation epitaxy

MORAIS, P. C ; COX, H. M ; BASTOS, P. L ; HWANG, D. M ; WORLOCK, J. M ; YABLONOVITCH, E ; NAHORY, R. E

Applied physics letters, 1989-01, Vol.54 (5), p.442-444 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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4
Role of step-flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire-like arrays
Role of step-flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire-like arrays
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Role of step-flow dynamics in interface roughening and in the spontaneous formation of InGaAs/InP wire-like arrays

COX, H. M ; ASPNES, D. E ; ALLEN, S. J ; BASTOS, P ; HWANG, D. M ; MAHAJAN, S ; SHAHID, M. A ; MORAIS, P. C

Applied physics letters, 1990-08, Vol.57 (6), p.611-613 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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