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The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates
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The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates

KIM-CHAUVEAU, H ; DE MIERRY, P ; CHAUVEAU, J.-M ; DUBOZ, J.-Y

Journal of crystal growth, 2011-02, Vol.316 (1), p.30-36 [Periódico revisado por pares]

Amsterdam: Elsevier

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2
Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy
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Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Cordier, Y. ; Moreno, J.-C. ; Baron, N. ; Frayssinet, E. ; Chauveau, J.-M. ; Nemoz, M. ; Chenot, S. ; Damilano, B. ; Semond, F.

Journal of crystal growth, 2010-09, Vol.312 (19), p.2683-2688 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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3
Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes
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Growth optimization and characterization of lattice-matched Al0.82In0.18N optical confinement layer for edge emitting nitride laser diodes

KIM-CHAUVEAU, H ; FRAYSSINET, E ; CHARASH, R ; VAJPEYI, A ; LAMY, J.-M ; AKHTER, M ; MAASKANT, P. P ; CORBETT, B ; HANGLEITER, A ; WIECK, A ; DAMILANO, B ; DE MIERRY, P ; BODIOU, L ; NGUYEN, L ; VENNEGUES, P ; CHAUVEAU, J.-M ; CORDIER, Y ; DUBOZ, J. Y

Journal of crystal growth, 2012, Vol.338 (1), p.20-29 [Periódico revisado por pares]

Amsterdam: Elsevier

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4
Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters
Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters
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Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Vennéguès, P. ; Diaby, B.S. ; Kim-Chauveau, H. ; Bodiou, L. ; Schenk, H.P.D. ; Frayssinet, E. ; Martin, R.W. ; Watson, I.M.

Journal of crystal growth, 2012-08, Vol.353 (1), p.108-114 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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5
Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE
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Correlations between structural and optical properties of GaInNAs quantum wells grown by MBE

Chauveau, J.-M. ; Trampert, A. ; Pinault, M.-A. ; Tournié, E. ; Du, K. ; Ploog, K.H.

Journal of crystal growth, 2003-04, Vol.251 (1), p.383-387 [Periódico revisado por pares]

Amsterdam: Elsevier B.V

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