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Impact of Interface Trap Charges on Analog/RF and Linearity Performances of Dual-Material Gate-Oxide-Stack Double-Gate TFET
Impact of Interface Trap Charges on Analog/RF and Linearity Performances of Dual-Material Gate-Oxide-Stack Double-Gate TFET
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Impact of Interface Trap Charges on Analog/RF and Linearity Performances of Dual-Material Gate-Oxide-Stack Double-Gate TFET

Singh, Km. Sucheta ; Kumar, Satyendra ; Nigam, Kaushal

IEEE transactions on device and materials reliability, 2020-06, Vol.20 (2), p.404-412 [Periódico revisado por pares]

New York: IEEE

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2
Length scales and types of heterogeneities along the deep subduction interface; insights from exhumed rocks on Syros Island, Greece
Length scales and types of heterogeneities along the deep subduction interface; insights from exhumed rocks on Syros Island, Greece
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Length scales and types of heterogeneities along the deep subduction interface; insights from exhumed rocks on Syros Island, Greece

Kotowski, Alissa J ; Behr, Whitney M

Geosphere (Boulder, Colo.), 2019-08, Vol.15 (4), p.1038-1065 [Periódico revisado por pares]

Geological Society of America

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3
Deformation-enhanced fluid and mass transfer along Western and Central Alps paleo-subduction interfaces; significance for carbon cycling models
Deformation-enhanced fluid and mass transfer along Western and Central Alps paleo-subduction interfaces; significance for carbon cycling models
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Deformation-enhanced fluid and mass transfer along Western and Central Alps paleo-subduction interfaces; significance for carbon cycling models

Jaeckel, Kathleen ; Bebout, Gray E ; Angiboust, Samuel

Geosphere (Boulder, Colo.), 2018-12, Vol.14 (6), p.2355-2375 [Periódico revisado por pares]

Geological Society of America

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4
Impact of Interface Trap Charges on Performance of Electrically Doped Tunnel FET With Heterogeneous Gate Dielectric
Impact of Interface Trap Charges on Performance of Electrically Doped Tunnel FET With Heterogeneous Gate Dielectric
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Impact of Interface Trap Charges on Performance of Electrically Doped Tunnel FET With Heterogeneous Gate Dielectric

Venkatesh, Pulimamidi ; Nigam, Kaushal ; Pandey, Sunil ; Sharma, Dheeraj ; Kondekar, Pravin N.

IEEE transactions on device and materials reliability, 2017-03, Vol.17 (1), p.245-252 [Periódico revisado por pares]

New York: IEEE

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5
Multiple veining in a paleo-accretionary wedge; the metamorphic rock record of prograde dehydration and transient high pore-fluid pressures along the subduction interface (Western Series, central Chile)
Multiple veining in a paleo-accretionary wedge; the metamorphic rock record of prograde dehydration and transient high pore-fluid pressures along the subduction interface (Western Series, central Chile)
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Multiple veining in a paleo-accretionary wedge; the metamorphic rock record of prograde dehydration and transient high pore-fluid pressures along the subduction interface (Western Series, central Chile)

Muñoz-Montecinos, Jesús ; Angiboust, Samuel ; Cambeses, Aitor ; García-Casco, Antonio

Geosphere (Boulder, Colo.), 2020-06, Vol.16 (3), p.765-786 [Periódico revisado por pares]

Geological Society of America

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6
Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices
Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices
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Single Pulse Charge Pumping Technique Improvement for Interface-States Profiling in the Channel of MOSFET Devices

Messaoud, DhiaElhak ; Djezzar, Boualem ; Boubaaya, Mohamed ; Benabdelmoumene, Abdelmadjid ; Zatout, Boumediene ; Chenouf, Amel ; Zitouni, Abdelkader

IEEE transactions on device and materials reliability, 2023-12, Vol.23 (4), p.521-529 [Periódico revisado por pares]

New York: IEEE

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7
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's
Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's
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Impact of Interface Layer on Device Characteristics of Si:HfO2-Based FeFET's

Jung, Taehwan ; O'Sullivan, Barry J. ; Ronchi, Nicolo ; Linten, Dimitri ; Shin, Changhwan ; Van Houdt, Jan

IEEE transactions on device and materials reliability, 2021-06, Vol.21 (2), p.176-182 [Periódico revisado por pares]

New York: IEEE

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8
Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diode on Si (100)
Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diode on Si (100)
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Probing Interface Trapping Characteristics of Au/β-Ga2O3 Schottky Barrier Diode on Si (100)

Yadav, Manoj K. ; Mondal, Arnab ; Sharma, Satinder K. ; Bag, Ankush

IEEE transactions on device and materials reliability, 2021-12, Vol.21 (4), p.613-619 [Periódico revisado por pares]

New York: IEEE

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9
Open AR-Sandbox; a haptic interface for geoscience education and outreach
Open AR-Sandbox; a haptic interface for geoscience education and outreach
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Open AR-Sandbox; a haptic interface for geoscience education and outreach

Wellmann, Florian ; Virgo, Simon ; Escallon, Daniel ; de la Varga, Miguel ; Jüstel, Alexander ; Wagner, Florian M ; Kowalski, Julia ; Zhao, Hu ; Fehling, Robin ; Chen, Qian

Geosphere (Boulder, Colo.), 2022-04, Vol.18 (2), p.732-749 [Periódico revisado por pares]

Geological Society of America

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10
Insights from the geological record of deformation along the subduction interface at depths of seismogenesis
Insights from the geological record of deformation along the subduction interface at depths of seismogenesis
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Insights from the geological record of deformation along the subduction interface at depths of seismogenesis

Fisher, Donald M ; Hooker, John N ; Smye, Andrew J ; Chen, Tsai-Wei

Geosphere (Boulder, Colo.), 2021-11, Vol.17 (6), p.1686-1703 [Periódico revisado por pares]

Geological Society of America

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