Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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InAs quantum dots over InGaAs for infrared photodetectorsPires, M.P. ; Landi, S.M. ; Tribuzy, C.V-B. ; Nunes, L.A. ; Marega, E. ; Souza, P.L.Journal of crystal growth, 2004-12, Vol.272 (1), p.192-197 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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2 |
Material Type: Artigo
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Current bistability in a weakly coupled multi-quantum well structure: a magnetic field induced 'memory effect'Feu, W H M ; Villas-Bôas, J M ; Cury, L A ; Guimarães, P S S ; Vieira, G S ; Tanaka, R Y ; Passaro, A ; Pires, M P ; Landi, S M ; Souza, P LJournal of physics. D, Applied physics, 2009-07, Vol.42 (14), p.145109-145109 (7) [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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3 |
Material Type: Artigo
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InAs quantum dots grown on InAlGaAs lattice matched to InPBorgstrom, M. ; Pires, M.P. ; Bryllert, T. ; Landi, S. ; Seifert, W. ; Souza, P.L.Journal of crystal growth, 2003-05, Vol.252 (4), p.481-485 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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4 |
Material Type: Artigo
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Conduction mechanisms and low-frequency electrical noise studies in pin InGaAs/InAlAs strained MQW photodiodesPires, M.P. ; Guastavino, F.C. ; Yavich, B. ; Souza, P.L. ; Mwongbote, A.E. ; Valenza, M.IEEE transactions on electron devices, 2005-09, Vol.52 (9), p.1949-1953 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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5 |
Material Type: Artigo
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Anomalous I versus V characteristics of InGaAs/InAlAs strained multiple quantum well structures for amplitude modulatorsPires, M P ; Guastavino, F ; Yavich, B ; Souza, P LSemiconductor science and technology, 2003-08, Vol.18 (8), p.729-732 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
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6 |
Material Type: Artigo
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pρT measurements of polyethylene glycol dimethylethers between 278.15 and 328.15 K at pressures to 12 MPaCOMUNAS, M. J. P ; LOPEZ, E. R ; PIRES, P ; GARCIA, J ; FERNANDEZ, JInternational journal of thermophysics, 2000-07, Vol.21 (4), p.831-851 [Periódico revisado por pares]New York, NY: SpringerTexto completo disponível |
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7 |
Material Type: Artigo
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Computational intelligence applied to the growth of quantum dotsSingulani, Anderson P. ; Vilela Neto, Omar P. ; Aurélio Pacheco, Marco C. ; Vellasco, Marley B.R. ; Pires, Maurício P. ; Souza, Patrícia L.Journal of crystal growth, 2008-11, Vol.310 (23), p.5063-5065 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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8 |
Material Type: Artigo
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Growth of InAs nanostructures on InP using atomic-force nanolithographyFONSECA FILHO, H. D ; PRIOLI, R ; PIRES, M. P ; LOPES, A. S ; SOUZA, P. L ; PONCE, F. AApplied physics. A, Materials science & processing, 2007-12, Vol.89 (4), p.945-949 [Periódico revisado por pares]Berlin: SpringerTexto completo disponível |
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9 |
Material Type: Artigo
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Effect of growth temperature on C-doped InAlAs layers grown by LP-MOVPERibeiro, M.L. ; Souza, P.L. ; Tribuzy, C.V.-B. ; Pires, M.P. ; Yavich, B.Journal of crystal growth, 2003-02, Vol.248, p.134-138 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
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10 |
Material Type: Artigo
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Spherical and lamellar octadecylsilane hybrid silicasBrambilla, Rodrigo ; Pires, Gilvan P. ; da Silveira, Nadya P. ; dos Santos, João H.Z. ; Miranda, Márcia S.L. ; Frost, Ray L.Journal of non-crystalline solids, 2008-11, Vol.354 (45-46), p.5033-5040 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |