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Design Space of \beta -(Al } Ga -\textit}\text} O } /Ga } O } Double Heterojunction Field-Effect Transistors for High-Power Applications
Design Space of \beta -(Al } Ga -\textit}\text} O } /Ga } O } Double Heterojunction Field-Effect Transistors for High-Power Applications
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Design Space of \beta -(Al } Ga -\textit}\text} O } /Ga } O } Double Heterojunction Field-Effect Transistors for High-Power Applications

Meshram, Ashvinee Deo ; Sengupta, Anumita ; Bhattacharyya, Tarun K. ; Dutta, Gourab

IEEE transactions on electron devices, 2024-06, p.1-7 [Periódico revisado por pares]

IEEE

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2
The Structural and Electrical Properties of the Au/n-Si (MS) Diodes With Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method
The Structural and Electrical Properties of the Au/n-Si (MS) Diodes With Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method
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The Structural and Electrical Properties of the Au/n-Si (MS) Diodes With Nanocomposites Interlayer (Ag-Doped ZnO/PVP) by Using the Simple Ultrasound-Assisted Method

Altindal, S. ; Sevgili, O. ; Azizian-Kalandaragh, Y.

IEEE transactions on electron devices, 2019-07, Vol.66 (7), p.3103-3109 [Periódico revisado por pares]

New York: IEEE

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3
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al } O } / \beta -Ga } O } MOSCAPs
Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al } O } / \beta -Ga } O } MOSCAPs
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Ion Irradiation-Induced Interface Mixing and the Charge Trap Profiles Investigated by In Situ Electrical Measurements in Pt/Al } O } / \beta -Ga } O } MOSCAPs

Manikanthababu, N. ; Joishi, C. ; Biswas, J. ; Prajna, K. ; Asokan, K. ; Vas, J. V. ; Medwal, R. ; Meena, R. C. ; Lodha, S. ; Singh, R.

IEEE transactions on electron devices, 2023-05, p.1-7 [Periódico revisado por pares]

IEEE

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4
beta -Ga } O } Pseudo-CMOS Monolithic Inverters
beta -Ga } O } Pseudo-CMOS Monolithic Inverters
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beta -Ga } O } Pseudo-CMOS Monolithic Inverters

Chettri, Dhanu ; Mainali, Ganesh ; Amruth, C. ; Khandelwal, Vishal ; Yuvaraja, Saravanan ; Xiao, Na ; Tang, Xiao ; Baran, Derya ; Li, Xiaohang

IEEE transactions on electron devices, 2023-08, p.1-6 [Periódico revisado por pares]

IEEE

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5
The Trench Power MOSFET-Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability
The Trench Power MOSFET-Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability
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The Trench Power MOSFET-Part II: Application Specific VDMOS, LDMOS, Packaging, and Reliability

Williams, Richard K. ; Darwish, Mohamed N. ; Blanchard, Richard A. ; Siemieniec, Ralf ; Rutter, Phil ; Kawaguchi, Yusuke

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.692-712 [Periódico revisado por pares]

New York: IEEE

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6
The Trench Power MOSFET: Part I-History, Technology, and Prospects
The Trench Power MOSFET: Part I-History, Technology, and Prospects
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The Trench Power MOSFET: Part I-History, Technology, and Prospects

Williams, Richard K. ; Darwish, Mohamed N. ; Blanchard, Richard A. ; Siemieniec, Ralf ; Rutter, Phil ; Kawaguchi, Yusuke

IEEE transactions on electron devices, 2017-03, Vol.64 (3), p.674-691 [Periódico revisado por pares]

New York: IEEE

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7
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness
Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness
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Interfacial Layer Engineering in Sub-5-nm HZO: Enabling Low-Temperature Process, Low-Voltage Operation, and High Robustness

Yu, Eunseon ; Lyu, Xiao ; Si, Mengwei ; Ye, Peide D. ; Roy, Kaushik

IEEE transactions on electron devices, 2023-06, Vol.70 (6), p.1-8 [Periódico revisado por pares]

IEEE

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8
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor
Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor
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Device-Level Thermal Analysis for Gallium Oxide Lateral Field-Effect Transistor

Mao, Yali ; Meng, Biwei ; Qin, Zong ; Gao, Bing ; Yuan, Chao

IEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1-6 [Periódico revisado por pares]

New York: IEEE

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9
Accurate Extraction of Minority Carrier Lifetimes-Part I: Transient Methods
Accurate Extraction of Minority Carrier Lifetimes-Part I: Transient Methods
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Accurate Extraction of Minority Carrier Lifetimes-Part I: Transient Methods

Stampfer, Paul ; Stampfer, Bernhard ; Grasser, Tibor ; Waltl, Michael

IEEE transactions on electron devices, 2023-08, Vol.70 (8), p.4320-4325 [Periódico revisado por pares]

New York: IEEE

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10
Improved Performance of MoS } Negative-Capacitance Transistors by Using Hf -\textit} Al } O } as Gate Dielectric Plus NH } -Plasma Treatment
Improved Performance of MoS } Negative-Capacitance Transistors by Using Hf -\textit} Al } O } as Gate Dielectric Plus NH } -Plasma Treatment
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Improved Performance of MoS } Negative-Capacitance Transistors by Using Hf -\textit} Al } O } as Gate Dielectric Plus NH } -Plasma Treatment

Xia, Yuqin ; Liu, Lu ; Chen, Shangde ; Xu, Jing-Ping

IEEE transactions on electron devices, 2023-07, p.1-7 [Periódico revisado por pares]

IEEE

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