skip to main content
Idioma:
Resultados 1 2 3 4 5 next page
Refinado por: Nome da Publicação: Ieee Electron Device Letters remover assunto: Science & Technology remover
Result Number Material Type Add to My Shelf Action Record Details and Options
1
Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes
Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes
Material Type:
Artigo 		Adicionar ao Meu Espaço

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes

Brusaterra, E. ; Bahat Treidel, E. ; Brunner, F. ; Wolf, M. ; Thies, A. ; Wurfl, J. ; Hilt, O.

IEEE electron device letters, 2023-03, Vol.44 (3), p.1-1 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
2
Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-based Memristors
Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-based Memristors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-based Memristors

Perez-Martinez, Jose Carlos ; Martin-Martin, Diego ; Del Pozo, Gonzalo ; Arredondo, Belen ; Guerrero, Antonio ; Romero, Beatriz

IEEE electron device letters, 2023-08, Vol.44 (8), p.1-1 [Periódico revisado por pares]

IEEE

Texto completo disponível

Citações Citado por
3
Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching
Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching
Material Type:
Artigo 		Adicionar ao Meu Espaço

Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching

Koo, Ryun-Han ; Shin, Wonjun ; Ryu, Sangwoo ; Lee, Kyungmin ; Park, Sung-Ho ; Im, Jiseong ; Ko, Jong-Hyun ; Kim, Jeong-Hyun ; Kwon, Dongseok ; Kim, Jae-Joon ; Kwon, Daewoong ; Lee, Jong-Ho

IEEE electron device letters, 2023-10, Vol.44 (10), p.1-1 [Periódico revisado por pares]

IEEE

Texto completo disponível

Citações Citado por
4
Tunable Bandgap of LuxIn1-xO Ternary Alloy for Solar-blind Ultraviolet Detection
Tunable Bandgap of LuxIn1-xO Ternary Alloy for Solar-blind Ultraviolet Detection
Material Type:
Artigo 		Adicionar ao Meu Espaço

Tunable Bandgap of LuxIn1-xO Ternary Alloy for Solar-blind Ultraviolet Detection

Zhang, Dan ; Liang, Jiarong ; Luo, Zhiyuan ; Wang, Zhao ; Liu, Yanghui ; Zheng, Wei

IEEE electron device letters, 2024-02, Vol.45 (2), p.1-1 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
5
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability
Material Type:
Artigo 		Adicionar ao Meu Espaço

ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

Liang, Yan-Kui ; Li, Wei-Li ; Wang, Yong-Jyun ; Peng, Li-Chi ; Lu, Chun-Chieh ; Huang, Huai-Ying ; Yeong, Sai Hooi ; Lin, Yu-Ming ; Chu, Ying-Hao ; Chang, Edward-Yi ; Lin, Chun-Hsiung

IEEE electron device letters, 2022-09, Vol.43 (9), p.1451-1454 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
6
KrF excimer laser annealing with an ultra-low laser fluence for enabling ferroelectric Hf0.5Zr0.5O2
KrF excimer laser annealing with an ultra-low laser fluence for enabling ferroelectric Hf0.5Zr0.5O2
Material Type:
Artigo 		Adicionar ao Meu Espaço

KrF excimer laser annealing with an ultra-low laser fluence for enabling ferroelectric Hf0.5Zr0.5O2

Chen, Li ; Song, Wendong ; Wang, Weijie ; Lee, Hock Koon ; Chen, Zhixian ; Zhao, Wenting ; Zhu, Yao

IEEE electron device letters, 2023-01, p.1-1 [Periódico revisado por pares]

IEEE

Texto completo disponível

Citações Citado por
7
Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS with 0.13-μm Bipolar-CMOS-DMOS Technology
Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS with 0.13-μm Bipolar-CMOS-DMOS Technology
Material Type:
Artigo 		Adicionar ao Meu Espaço

Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS with 0.13-μm Bipolar-CMOS-DMOS Technology

Hung, Wei-Chieh ; Hung, Wei-Chun ; Chang, Ting-Chang ; Tu, Yu-Fa ; Chen, Min-Chen ; Yeh, Chien-Hung ; Kuo, Hung-Ming ; Lee, Ya-Huan ; Yen, Wei-Ting ; Liang, Fu-Chen

IEEE electron device letters, 2023-05, Vol.44 (5), p.1-1 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
8
Unique Bias Stress Instability of Heterogeneous Ga2O3-on-SiC MOSFET
Unique Bias Stress Instability of Heterogeneous Ga2O3-on-SiC MOSFET
Material Type:
Artigo 		Adicionar ao Meu Espaço

Unique Bias Stress Instability of Heterogeneous Ga2O3-on-SiC MOSFET

Liu, Chenyu ; Wang, Yibo ; Xu, Wenhui ; Jia, Xiaole ; Huang, Shuqi ; Li, Yuewen ; Li, Bochang ; Luo, Zhengdong ; Fang, Cizhe ; Liu, Yan ; You, Tiangui ; Ou, Xin ; Hao, Yue ; Han, Genquan

IEEE electron device letters, 2023-08, Vol.44 (8), p.1-1 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
9
Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors
Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors
Material Type:
Artigo 		Adicionar ao Meu Espaço

Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors

Bae, Jong-Ho ; Kwon, Daewoong ; Jeon, Namho ; Cheema, Suraj ; Tan, Ava Jiang ; Hu, Chenming ; Salahuddin, Sayeef

IEEE electron device letters, 2020-11, Vol.41 (11), p.1637-1640 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
10
2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination
2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination
Material Type:
Artigo 		Adicionar ao Meu Espaço

2.7 kV Low Leakage Vertical PtOx/β-Ga2O3 Schottky Barrier Diodes with Self-Aligned Mesa Termination

Han, Zhao ; Jian, Guangzhong ; Zhou, Xuanze ; He, Qiming ; Hao, Weibing ; Liu, Jinyang ; Li, Botong ; Huang, Hong ; Li, Qiuyan ; Zhao, Xiaolong ; Xu, Guangwei ; Long, Shibing

IEEE electron device letters, 2023-10, Vol.44 (10), p.1-1 [Periódico revisado por pares]

New York: IEEE

Texto completo disponível

Citações Citado por
Resultados 1 2 3 4 5 next page

Personalize Seus Resultados

  1. Editar

Refine Search Results

Expandir Meus Resultados

  1.   

Data de Publicação 

De até
Refinar
  1. Antes de2017  (3)
  2. 2017Até2018  (25)
  3. 2019Até2020  (27)
  4. 2021Até2023  (79)
  5. Após 2023  (5)
  6. Mais opções open sub menu

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

Buscando em bases de dados remotas. Favor aguardar.