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Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes
Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes
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Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through pn-Diodes

Brusaterra, E. ; Bahat Treidel, E. ; Brunner, F. ; Wolf, M. ; Thies, A. ; Wurfl, J. ; Hilt, O.

IEEE electron device letters, 2023-03, Vol.44 (3), p.1-1 [Periódico revisado por pares]

New York: IEEE

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2
Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-based Memristors
Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-based Memristors
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Impact of Scan Rate and Mobile Ion Concentration on the Anomalous J-V Curves of Metal Halide Perovskite-based Memristors

Perez-Martinez, Jose Carlos ; Martin-Martin, Diego ; Del Pozo, Gonzalo ; Arredondo, Belen ; Guerrero, Antonio ; Romero, Beatriz

IEEE electron device letters, 2023-08, Vol.44 (8), p.1-1 [Periódico revisado por pares]

IEEE

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3
Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching
Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching
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Comparative Analysis of n- and p-type Ferroelectric Tunnel Junctions Through Understanding of non-FE Resistance Switching

Koo, Ryun-Han ; Shin, Wonjun ; Ryu, Sangwoo ; Lee, Kyungmin ; Park, Sung-Ho ; Im, Jiseong ; Ko, Jong-Hyun ; Kim, Jeong-Hyun ; Kwon, Dongseok ; Kim, Jae-Joon ; Kwon, Daewoong ; Lee, Jong-Ho

IEEE electron device letters, 2023-10, Vol.44 (10), p.1-1 [Periódico revisado por pares]

IEEE

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4
Tunable Bandgap of LuxIn1-xO Ternary Alloy for Solar-blind Ultraviolet Detection
Tunable Bandgap of LuxIn1-xO Ternary Alloy for Solar-blind Ultraviolet Detection
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Tunable Bandgap of LuxIn1-xO Ternary Alloy for Solar-blind Ultraviolet Detection

Zhang, Dan ; Liang, Jiarong ; Luo, Zhiyuan ; Wang, Zhao ; Liu, Yanghui ; Zheng, Wei

IEEE electron device letters, 2024-02, Vol.45 (2), p.1-1 [Periódico revisado por pares]

New York: IEEE

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5
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability
ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability
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ZrO2-HfO2 Superlattice Ferroelectric Capacitors With Optimized Annealing to Achieve Extremely High Polarization Stability

Liang, Yan-Kui ; Li, Wei-Li ; Wang, Yong-Jyun ; Peng, Li-Chi ; Lu, Chun-Chieh ; Huang, Huai-Ying ; Yeong, Sai Hooi ; Lin, Yu-Ming ; Chu, Ying-Hao ; Chang, Edward-Yi ; Lin, Chun-Hsiung

IEEE electron device letters, 2022-09, Vol.43 (9), p.1451-1454 [Periódico revisado por pares]

New York: IEEE

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6
KrF excimer laser annealing with an ultra-low laser fluence for enabling ferroelectric Hf0.5Zr0.5O2
KrF excimer laser annealing with an ultra-low laser fluence for enabling ferroelectric Hf0.5Zr0.5O2
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KrF excimer laser annealing with an ultra-low laser fluence for enabling ferroelectric Hf0.5Zr0.5O2

Chen, Li ; Song, Wendong ; Wang, Weijie ; Lee, Hock Koon ; Chen, Zhixian ; Zhao, Wenting ; Zhu, Yao

IEEE electron device letters, 2023-01, p.1-1 [Periódico revisado por pares]

IEEE

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7
Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS with 0.13-μm Bipolar-CMOS-DMOS Technology
Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS with 0.13-μm Bipolar-CMOS-DMOS Technology
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Defect Passivation and Reliability Enhancement by Low-Temperature-High-Pressure Hydrogenation in LDMOS with 0.13-μm Bipolar-CMOS-DMOS Technology

Hung, Wei-Chieh ; Hung, Wei-Chun ; Chang, Ting-Chang ; Tu, Yu-Fa ; Chen, Min-Chen ; Yeh, Chien-Hung ; Kuo, Hung-Ming ; Lee, Ya-Huan ; Yen, Wei-Ting ; Liang, Fu-Chen

IEEE electron device letters, 2023-05, Vol.44 (5), p.1-1 [Periódico revisado por pares]

New York: IEEE

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8
High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder
High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder
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High-Performance Hexagonal Tellurium Thin-Film Transistor Using Tellurium Oxide as a Crystallization Retarder

Kim, Taikyu ; Choi, Cheol Hee ; Kim, Se Eun ; Kim, Jeong-Kyu ; Jang, Jaeman ; Choi, SeungChan ; Noh, Jiyong ; Park, Kwon-Shik ; Kim, JeomJae ; Yoon, SooYoung ; Jeong, Jae Kyeong

IEEE electron device letters, 2023-02, Vol.44 (2), p.1-1 [Periódico revisado por pares]

New York: IEEE

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9
Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors
Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors
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Highly Scaled, High Endurance, Ω-Gate, Nanowire Ferroelectric FET Memory Transistors

Bae, Jong-Ho ; Kwon, Daewoong ; Jeon, Namho ; Cheema, Suraj ; Tan, Ava Jiang ; Hu, Chenming ; Salahuddin, Sayeef

IEEE electron device letters, 2020-11, Vol.41 (11), p.1637-1640 [Periódico revisado por pares]

New York: IEEE

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10
Defect Mitigation in Lead-Free Cs 3 Bi 2 I 9 Single Crystals for High Performance X-Ray Detection and Imaging
Defect Mitigation in Lead-Free Cs 3 Bi 2 I 9 Single Crystals for High Performance X-Ray Detection and Imaging
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Defect Mitigation in Lead-Free Cs 3 Bi 2 I 9 Single Crystals for High Performance X-Ray Detection and Imaging

Liu, Jiayang ; Chen, Yuangan ; Tan, Pengju ; Liu, Tianyu ; Hu, Mingzhu ; Sun, Mulin ; Cheng, Long ; Ma, Xiaolan ; Zhang, Yunlong ; Hu, Qin

IEEE electron device letters, 2024-06, Vol.45 (6), p.1036-1039 [Periódico revisado por pares]

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