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Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching
Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching
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Quantum well laser with an extremely large active layer width to optical confinement factor ratio for high-energy single picosecond pulse generation by gain switching

Ryvkin, Boris S ; Avrutin, Eugene A ; Kostamovaara, Juha T

Semiconductor science and technology, 2011-04, Vol.26 (4), p.045010 [Periódico revisado por pares]

Bristol: IOP Publishing

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2
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
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Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing

Vassilevski, K V ; Wright, N G ; Nikitina, I P ; Horsfall, A B ; O'Neill, A G ; Uren, M J ; Hilton, K P ; Masterton, A G ; Hydes, A J ; Johnson, C M

Semiconductor science and technology, 2005-03, Vol.20 (3), p.271-278 [Periódico revisado por pares]

Bristol: IOP Publishing

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3
Modulation-doped SixGe1−x/Si shells electrically isolated from conductive substrates
Modulation-doped SixGe1−x/Si shells electrically isolated from conductive substrates
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Modulation-doped SixGe1−x/Si shells electrically isolated from conductive substrates

Yukecheva, Yu S ; Mussler, G ; Shushunova, V ; Weber, A ; Deckardt, E ; Prinz, V Ya ; Grützmacher, D

Semiconductor science and technology, 2008-10, Vol.23 (10), p.105007 [Periódico revisado por pares]

Bristol: IOP Publishing

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4
Influence of the magnetic field on the conductivity within the Coulomb gap of n-ZnSe single crystals doped with Ag
Influence of the magnetic field on the conductivity within the Coulomb gap of n-ZnSe single crystals doped with Ag
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Influence of the magnetic field on the conductivity within the Coulomb gap of n-ZnSe single crystals doped with Ag

Nedeoglo, N D ; Laiho, R ; Lashkul, A V ; Lähderanta, E ; Shakhov, M A

Semiconductor science and technology, 2006-09, Vol.21 (9), p.1335-1340 [Periódico revisado por pares]

Bristol: IOP Publishing

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5
The Hall effect and electron energy spectrum near the conduction band edge of n-CdSb in magnetic fields up to 25 T
The Hall effect and electron energy spectrum near the conduction band edge of n-CdSb in magnetic fields up to 25 T
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The Hall effect and electron energy spectrum near the conduction band edge of n-CdSb in magnetic fields up to 25 T

Laiho, R ; Lashkul, A V ; Lisunov, K G ; Lähderanta, E ; Safonchik, M O ; Shakhov, M A

Semiconductor science and technology, 2006-07, Vol.21 (7), p.918-927 [Periódico revisado por pares]

Bristol: IOP Publishing

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6
Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1−xAs matrices
Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1−xAs matrices
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Spin lifetime from Hanle-effect measurements in samples with InAs quantum dots embedded in different AlxGa1−xAs matrices

Fürst, J ; Pascher, H ; Abalmassov, V A ; Shamirzaev, T S ; Zhuravlev, K S

Semiconductor science and technology, 2005-02, Vol.20 (2), p.209-215 [Periódico revisado por pares]

Bristol: IOP Publishing

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7
Recombination parameters of epitaxial CdxHg1-xTe/CdTe layers from photoelectromagnetic and photoconductive effects
Recombination parameters of epitaxial CdxHg1-xTe/CdTe layers from photoelectromagnetic and photoconductive effects
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Recombination parameters of epitaxial CdxHg1-xTe/CdTe layers from photoelectromagnetic and photoconductive effects

Studenikin, S A ; Panaev, I A

Semiconductor science and technology, 1993-07, Vol.8 (7), p.1324-1330 [Periódico revisado por pares]

Bristol: IOP Publishing

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8
Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors
Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors
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Edge-emitting InGaAs/GaAs lasers with deeply etched semiconductor/air distributed Bragg reflector mirrors

Maximov, M V ; Ramushina, E M ; Skopina, V I ; Tanklevskaya, E M ; Solov'ev, V A ; Shernyakov, Yu M ; Kaiander, I N ; Kaliteevski, M A ; Gurevich, S A ; Ledentsov, N N ; Ustinov, V M ; Alferov, Zh I ; Torres, C M Sotomayor ; Bimberg, D

Semiconductor science and technology, 2002-11, Vol.17 (11), p.L69-L71 [Periódico revisado por pares]

Bristol: IOP Publishing

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9
Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping
Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping
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Characterization of strain relaxation in low-defect-density thin single and step-graded germanium buffer layers by high-resolution two-dimensional x-ray diffraction mapping

Nur, O ; Karlsteen, M ; Södervall, U ; Willander, M ; Patel, C J ; Hernandez, C ; Campidelli, Y ; Bensahel, D ; Kyutt, R N

Semiconductor science and technology, 2000-07, Vol.15 (7), p.L25-L30 [Periódico revisado por pares]

Bristol: IOP Publishing

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10
Understanding electroluminescence from thin silicon dioxide films
Understanding electroluminescence from thin silicon dioxide films
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Understanding electroluminescence from thin silicon dioxide films

Baraban, A P ; Semykina, E A ; Vaniouchov, M B

Semiconductor science and technology, 2000-06, Vol.15 (6), p.546-550 [Periódico revisado por pares]

Bristol: IOP Publishing

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