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Refinado por: Base de dados/Biblioteca: Institute of Physics remover assunto: Molecular Beam Epitaxy remover
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Incorporation of Ti in epitaxial Fe2TiO4thin films
Incorporation of Ti in epitaxial Fe2TiO4thin films
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Incorporation of Ti in epitaxial Fe2TiO4thin films

Kaspar, Tiffany C ; Spurgeon, Steven R ; Matthews, Bethany E ; Bowden, Mark E ; Heald, Steve M ; Wang, Le ; Kelley, Ron ; Paudel, Rajendra ; Isaacs-Smith, Tamara ; Comes, Ryan B ; Yin, Xinmao ; Tang, Chi Sin ; Wee, Andrew T S ; Chambers, Scott A

Journal of physics. Condensed matter, 2021-08, Vol.33 (31) [Periódico revisado por pares]

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2
Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene
Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene
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Germanene: a novel two-dimensional germanium allotrope akin to graphene and silicene

Dávila, M E ; Xian, L ; Cahangirov, S ; Rubio, A ; Le Lay, G

New journal of physics, 2014-09, Vol.16 (9), p.95002-10 [Periódico revisado por pares]

IOP Publishing

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3
Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam
Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam
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Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beam

Shandyba, Nikita ; Kirichenko, Danil ; Sharov, Vladislav ; Chernenko, Natalia ; Balakirev, Sergey ; Solodovnik, Maxim

Nanotechnology, 2023-11, Vol.34 (46), p.465603 [Periódico revisado por pares]

England: IOP Publishing

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4
CdSe quantum dot formation induced by electron beam irradiation
CdSe quantum dot formation induced by electron beam irradiation
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CdSe quantum dot formation induced by electron beam irradiation

Akimoto, Ryoichi

Japanese Journal of Applied Physics, 2023-01, Vol.62 (1), p.10903 [Periódico revisado por pares]

Tokyo: IOP Publishing

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5
Recent progress in Ga2O3 power devices
Recent progress in Ga2O3 power devices
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Recent progress in Ga2O3 power devices

Higashiwaki, Masataka ; Sasaki, Kohei ; Murakami, Hisashi ; Kumagai, Yoshinao ; Koukitu, Akinori ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, Shigenobu

Semiconductor science and technology, 2016-01, Vol.31 (3) [Periódico revisado por pares]

IOP Publishing

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6
Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3 topological insulator layers
Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3 topological insulator layers
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Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3 topological insulator layers

Weyrich, C ; Drögeler, M ; Kampmeier, J ; Eschbach, M ; Mussler, G ; Merzenich, T ; Stoica, T ; Batov, I E ; Schubert, J ; Plucinski, L ; Beschoten, B ; Schneider, C M ; Stampfer, C ; Grützmacher, D ; Schäpers, Th

Journal of physics. Condensed matter, 2016-10, Vol.28 (49), p.495501-495501 [Periódico revisado por pares]

IOP Publishing

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7
Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy
Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy
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Advances in complex oxide quantum materials through new approaches to molecular beam epitaxy

Rimal, Gaurab ; Comes, Ryan B

Journal of physics. D, Applied physics, 2024-05, Vol.57 (19), p.193001 [Periódico revisado por pares]

United Kingdom: IOP Publishing

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8
Metastable phases of 2D boron sheets on Ag(1 1 1)
Metastable phases of 2D boron sheets on Ag(1 1 1)
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Metastable phases of 2D boron sheets on Ag(1 1 1)

Zhong, Qing ; Zhang, Jin ; Cheng, Peng ; Feng, Baojie ; Li, Wenbin ; Sheng, Shaoxiang ; Li, Hui ; Meng, Sheng ; Chen, Lan ; Wu, Kehui

Journal of physics. Condensed matter, 2017-03, Vol.29 (9), p.095002-095002 [Periódico revisado por pares]

England: IOP Publishing

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9
Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate Project supported by the National Natural Science Foundation of China (Grant Nos. 11604366, 11634007, 21872099, and 22072102) and the National Natural Science Foundation of Jiangsu Province, China (Grant No. BK 20160397). F. S. L. acknowledges support from the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017370)
Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate Project supported by the National Natural Science Foundation of China (Grant Nos. 11604366, 11634007, 21872099, and 22072102) and the National Natural Science Foundation of Jiangsu Province, China (Grant No. BK 20160397). F. S. L. acknowledges support from the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017370)
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Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate Project supported by the National Natural Science Foundation of China (Grant Nos. 11604366, 11634007, 21872099, and 22072102) and the National Natural Science Foundation of Jiangsu Province, China (Grant No. BK 20160397). F. S. L. acknowledges support from the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017370)

Lu, S ; Peng, K ; Wang, P D ; Chen, A X ; Ren, W ; Fang, X W ; Wu, Y ; Li, Z Y ; Li, H F ; Cheng, F Y ; Xiong, K L ; Yang, J Y ; Wang, J Z ; Ding, S A ; Jiang, Y P ; Wang, L ; Li, Q ; Li, F S ; Chi, L F

Chinese physics B, 2021-12, Vol.30 (12) [Periódico revisado por pares]

Chinese Physical Society and IOP Publishing Ltd

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10
The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix
The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix
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The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrix

Jia, Hui ; Yang, Junjie ; Tang, Mingchu ; Li, Wei ; Jurczak, Pamela ; Yu, Xuezhe ; Zhou, Taojie ; Park, Jae-Seong ; Li, Keshuang ; Deng, Huiwen ; Yu, Xueying ; Li, Ang ; Chen, Siming ; Seeds, Alwyn ; Liu, Huiyun

Journal of physics. D, Applied physics, 2022-12, Vol.55 (49), p.494002 [Periódico revisado por pares]

IOP Publishing

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