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1 |
Material Type: Artigo
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Epitaxial Aluminum Scandium Nitride Super High Frequency Acoustic ResonatorsPark, Mingyo ; Hao, Zhijian ; Dargis, Rytis ; Clark, Andrew ; Ansari, AzadehJournal of microelectromechanical systems, 2020-08, Vol.29 (4), p.490-498 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETsChabak, Kelson D. ; McCandless, Jonathan P. ; Moser, Neil A. ; Green, Andrew J. ; Mahalingam, Krishnamurthy ; Crespo, Antonio ; Hendricks, Nolan ; Howe, Brandon M. ; Tetlak, Stephen E. ; Leedy, Kevin ; Fitch, Robert C. ; Wakimoto, Daiki ; Sasaki, Kohei ; Kuramata, Akito ; Jessen, Gregg H.IEEE electron device letters, 2018-01, Vol.39 (1), p.67-70 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage AmplificationChoudhary, Sumit ; Schwarz, Daniel ; Funk, Hannes S. ; Weishaupt, D. ; Khosla, Robin ; Sharma, Satinder K. ; Schulze, JorgIEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2725-2731 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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An effective energy harvesting in low frequency using a piezo-patch cantilever beam with tapered rectangular cavitiesSrinivasulu Raju, S ; Choi, Seung-Bok ; Umapathy, M ; Uma, GSensors and actuators. A. Physical., 2019-10, Vol.297, p.111522, Article 111522 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
5 |
Material Type: Artigo
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Flexural wave concentration in tapered cylindrical beams and wedge-like rectangular beams with power-law thicknessZeng, Pengyun ; Zheng, Ling ; Deng, Jie ; Elsabbagh, Adel ; Xiang, Shuhong ; Yan, Tingfei ; Wu, YaoJournal of sound and vibration, 2019-07, Vol.452, p.82-96 [Periódico revisado por pares]Amsterdam: Elsevier LtdTexto completo disponível |
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Material Type: Artigo
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Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind PhotodetectorsTian, Chengyi ; Zhang, Chuanlun ; Lin, Jialong ; Zhang, Jie ; Yang, WeifengIEEE sensors journal, 2024-05, Vol.24 (9), p.14109-14117 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Epitaxial Ferrimagnetic Mn4N Thin Films on GaN by Molecular Beam EpitaxyZhang, Zexuan ; Cho, Yongjin ; Gong, Mingli ; Ho, Shao-Ting ; Singhal, Jashan ; Encomendero, Jimy ; Li, Xiang ; Lee, Hyunjea ; Xing, Huili Grace ; Jena, DebdeepIEEE transactions on magnetics, 2022-02, Vol.58 (2), p.1-6New York: IEEETexto completo disponível |
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Material Type: Artigo
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Material Defects and Dark Currents in InGaAs/InP Avalanche Photodiode DevicesGuo, Zilu ; Wang, Wenjuan ; Li, Yangjun ; Qu, Huidan ; Fan, Liuyan ; Chen, Xiren ; Zhu, Yicheng ; Gu, Yue ; Wang, Yajie ; Zheng, Changlin ; Chen, Pingping ; Lu, WeiIEEE transactions on electron devices, 2022-09, Vol.69 (9), p.4944-4949 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Progress in III-Nitride Tunnel Junctions for Optoelectronic DevicesWong, Matthew S. ; Speck, James S. ; Nakamura, Shuji ; DenBaars, Steven P.IEEE journal of quantum electronics, 2022-08, Vol.58 (4), p.1-11 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Recent progress in Ga2O3 power devicesHigashiwaki, Masataka ; Sasaki, Kohei ; Murakami, Hisashi ; Kumagai, Yoshinao ; Koukitu, Akinori ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuSemiconductor science and technology, 2016-01, Vol.31 (3) [Periódico revisado por pares]IOP PublishingTexto completo disponível |