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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Formation of Spontaneous Lateral Heterostructures in High Al content AlxGa1−xN Alloys Grown by High-Temperature Plasma-Assisted Molecular Beam EpitaxySarney, Wendy L. ; Ji, Mihee ; Leff, Asher C. ; Larkin, LeighAnn S. ; Garrett, Gregory A. ; Sampath, Anand V. ; Wraback, MichaelJournal of electronic materials, 2024-06, Vol.53 (6), p.2789-2797 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 2 |
Material Type: Artigo
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Optimization of GLAD Angle for E-Beam-Fabricated Tungsten Oxide (WO3) Thin Films Towards Novel Electrochromic BehaviorGutpa, Jyothi ; Shaik, Habibuddin ; Naveen Kumar, K. ; Sattar, Sheik AbdulJournal of electronic materials, 2023, Vol.52 (1), p.653-668 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 3 |
Material Type: Artigo
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Superb Improvement of the Picosecond Laser Ablation of Dielectrics Via a Top-Hat Beam for High-Efficiency Solar CellsQian, Feng ; Shen, Honglie ; Hong, JuanJournal of electronic materials, 2024-06, Vol.53 (6), p.3336-3345 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 4 |
Material Type: Artigo
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MBE HgCdTe Technology: A Very General Solution to IR Detection, Described by “Rule 07”, a Very Convenient HeuristicTennant, W.E. ; Lee, Donald ; Zandian, Majid ; Piquette, Eric ; Carmody, MichaelJournal of electronic materials, 2008-09, Vol.37 (9), p.1406-1410 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
| 5 |
Material Type: Artigo
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Ultrathin Elementary Te Nanocrystalline Films Prepared by Pure Physical Method for NO2 DetectionWei, Qing ; Su, Qianfa ; Liu, YiZhen ; Chen, Rui ; Gao, Xiuying ; Zeng, Tixian ; Sun, HuiJournal of electronic materials, 2023-03, Vol.52 (3), p.1900-1907 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 6 |
Material Type: Artigo
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Study of Macrodefects in MBE-Grown HgCdTe Epitaxial Layers Using Focused Ion Beam MillingReddy, M. ; Wilde, J. ; Peterson, J. M. ; Lofgreen, D.D. ; Johnson, S.M.Journal of electronic materials, 2012-10, Vol.41 (10), p.2957-2964 [Periódico revisado por pares]Boston: Springer USTexto completo disponível |
| 7 |
Material Type: Artigo
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p-Type Nonpolar a-ZnO:N Thin Films on r-Sapphire Substrates Grown by Molecular Beam EpitaxyMaekawa, Naoki ; Nakayama, Hirotake ; Yamane, Nobuaki ; Irie, Koji ; Abe, Tomoki ; Kasada, Hirofumi ; Ichino, Kunio ; Akaiwa, KazuakiJournal of electronic materials, 2020-08, Vol.49 (8), p.4474-4478 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 8 |
Material Type: Artigo
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Surface and Physical Properties Modifications of Electron Beam-Irradiated Monolayer MoS2-Au Heterointerface at NanoscaleGupta, Sanju ; Johnston, Ammon ; Khondaker, SaifulJournal of electronic materials, 2023-02, Vol.52 (2), p.1331-1346 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 9 |
Material Type: Artigo
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Numerical and Experimental Investigation of Infrared Optical Filter Based on Metal Oxide Thin Films for Temperature Mitigation in PhotovoltaicsHossain, M. I. ; Khandakar, A. ; Chowdhury, M. E. H. ; Ahmed, S. ; Nauman, M. M. ; Aïssa, B.Journal of electronic materials, 2022, Vol.51 (1), p.179-189 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
| 10 |
Material Type: Artigo
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MoSe2 Thin Films and Thin-Film Transistors Prepared by Electron Beam EvaporationWang, Jingfeng ; Zhang, Yue ; Wang, Lingran ; Yang, NingJournal of electronic materials, 2021-10, Vol.50 (10), p.5765-5773 [Periódico revisado por pares]New York: Springer USTexto completo disponível |
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