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Material Type: Artigo
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Incorporation of Ti in epitaxial Fe2TiO4thin filmsKaspar, Tiffany C ; Spurgeon, Steven R ; Matthews, Bethany E ; Bowden, Mark E ; Heald, Steve M ; Wang, Le ; Kelley, Ron ; Paudel, Rajendra ; Isaacs-Smith, Tamara ; Comes, Ryan B ; Yin, Xinmao ; Tang, Chi Sin ; Wee, Andrew T S ; Chambers, Scott AJournal of physics. Condensed matter, 2021-08, Vol.33 (31) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Patterning optimization for device realization of patterned GaAsSbN nanowire photodetectorsJohnson, Sean ; Pokharel, Rabin ; Lowe, Michael ; Dawkins, Kendall ; Li, Jia ; Iyer, ShanthiNanotechnology, 2024-09, Vol.35 (40), p.405301 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Modulation of GaAs nanowire growth by pre-treatment of Si substrate using a Ga focused ion beamShandyba, Nikita ; Kirichenko, Danil ; Sharov, Vladislav ; Chernenko, Natalia ; Balakirev, Sergey ; Solodovnik, MaximNanotechnology, 2023-11, Vol.34 (46), p.465603 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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Material Type: Artigo
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CdSe quantum dot formation induced by electron beam irradiationAkimoto, RyoichiJapanese Journal of Applied Physics, 2023-01, Vol.62 (1), p.10903 [Periódico revisado por pares]Tokyo: IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Recent progress in Ga2O3 power devicesHigashiwaki, Masataka ; Sasaki, Kohei ; Murakami, Hisashi ; Kumagai, Yoshinao ; Koukitu, Akinori ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuSemiconductor science and technology, 2016-01, Vol.31 (3) [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Advances in complex oxide quantum materials through new approaches to molecular beam epitaxyRimal, Gaurab ; Comes, Ryan BJournal of physics. D, Applied physics, 2024-05, Vol.57 (19), p.193001 [Periódico revisado por pares]United Kingdom: IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Growth, characterization, and transport properties of ternary (Bi1−xSbx)2Te3 topological insulator layersWeyrich, C ; Drögeler, M ; Kampmeier, J ; Eschbach, M ; Mussler, G ; Merzenich, T ; Stoica, T ; Batov, I E ; Schubert, J ; Plucinski, L ; Beschoten, B ; Schneider, C M ; Stampfer, C ; Grützmacher, D ; Schäpers, ThJournal of physics. Condensed matter, 2016-10, Vol.28 (49), p.495501-495501 [Periódico revisado por pares]IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Metastable phases of 2D boron sheets on Ag(1 1 1)Zhong, Qing ; Zhang, Jin ; Cheng, Peng ; Feng, Baojie ; Li, Wenbin ; Sheng, Shaoxiang ; Li, Hui ; Meng, Sheng ; Chen, Lan ; Wu, KehuiJournal of physics. Condensed matter, 2017-03, Vol.29 (9), p.095002-095002 [Periódico revisado por pares]England: IOP PublishingTexto completo disponível |
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Material Type: Artigo
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Molecular beam epitaxy growth of monolayer hexagonal MnTe2 on Si(111) substrate Project supported by the National Natural Science Foundation of China (Grant Nos. 11604366, 11634007, 21872099, and 22072102) and the National Natural Science Foundation of Jiangsu Province, China (Grant No. BK 20160397). F. S. L. acknowledges support from the Youth Innovation Promotion Association of Chinese Academy of Sciences (Grant No. 2017370)Lu, S ; Peng, K ; Wang, P D ; Chen, A X ; Ren, W ; Fang, X W ; Wu, Y ; Li, Z Y ; Li, H F ; Cheng, F Y ; Xiong, K L ; Yang, J Y ; Wang, J Z ; Ding, S A ; Jiang, Y P ; Wang, L ; Li, Q ; Li, F S ; Chi, L FChinese physics B, 2021-12, Vol.30 (12) [Periódico revisado por pares]Chinese Physical Society and IOP Publishing LtdTexto completo disponível |
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Material Type: Artigo
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The epitaxial growth and unique morphology of InAs quantum dots embedded in a Ge matrixJia, Hui ; Yang, Junjie ; Tang, Mingchu ; Li, Wei ; Jurczak, Pamela ; Yu, Xuezhe ; Zhou, Taojie ; Park, Jae-Seong ; Li, Keshuang ; Deng, Huiwen ; Yu, Xueying ; Li, Ang ; Chen, Siming ; Seeds, Alwyn ; Liu, HuiyunJournal of physics. D, Applied physics, 2022-12, Vol.55 (49), p.494002 [Periódico revisado por pares]IOP PublishingTexto completo disponível |