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1 |
Material Type: Artigo
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Numerical approximations for the molecular beam epitaxial growth model based on the invariant energy quadratization methodYang, Xiaofeng ; Zhao, Jia ; Wang, QiJournal of computational physics, 2017-03, Vol.333, p.104-127 [Periódico revisado por pares]Cambridge: Elsevier IncTexto completo disponível |
2 |
Material Type: Artigo
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Direct band-gap crossover in epitaxial monolayer boron nitrideElias, C ; Valvin, P ; Pelini, T ; Summerfield, A ; Mellor, C J ; Cheng, T S ; Eaves, L ; Foxon, C T ; Beton, P H ; Novikov, S V ; Gil, B ; Cassabois, GNature communications, 2019-06, Vol.10 (1), p.2639-7, Article 2639 [Periódico revisado por pares]England: Nature Publishing GroupTexto completo disponível |
3 |
Material Type: Artigo
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MBE grown Ga2O3 and its power device applicationsSasaki, Kohei ; Higashiwaki, Masataka ; Kuramata, Akito ; Masui, Takekazu ; Yamakoshi, ShigenobuJournal of crystal growth, 2013-09, Vol.378, p.591-595 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
4 |
Material Type: Artigo
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Recessed-Gate Enhancement-Mode \beta -Ga2O3 MOSFETsChabak, Kelson D. ; McCandless, Jonathan P. ; Moser, Neil A. ; Green, Andrew J. ; Mahalingam, Krishnamurthy ; Crespo, Antonio ; Hendricks, Nolan ; Howe, Brandon M. ; Tetlak, Stephen E. ; Leedy, Kevin ; Fitch, Robert C. ; Wakimoto, Daiki ; Sasaki, Kohei ; Kuramata, Akito ; Jessen, Gregg H.IEEE electron device letters, 2018-01, Vol.39 (1), p.67-70 [Periódico revisado por pares]New York: IEEETexto completo disponível |
5 |
Material Type: Artigo
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Donors and deep acceptors in β-Ga2O3Neal, Adam T. ; Mou, Shin ; Rafique, Subrina ; Zhao, Hongping ; Ahmadi, Elaheh ; Speck, James S. ; Stevens, Kevin T. ; Blevins, John D. ; Thomson, Darren B. ; Moser, Neil ; Chabak, Kelson D. ; Jessen, Gregg H.Applied physics letters, 2018-08, Vol.113 (6) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
6 |
Material Type: Artigo
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High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum StructureRong, Xin ; Wang, Xinqiang ; Ivanov, Sergey V. ; Jiang, Xinhe ; Chen, Guang ; Wang, Ping ; Wang, Weiying ; He, Chenguang ; Wang, Tao ; Schulz, Tobias ; Albrecht, Martin ; Jmerik, Valentin N. ; Toropov, Alexey A. ; Ratnikov, Viacheslav V. ; Kozlovsky, Vladimir I. ; Martovitsky, Victor P. ; Jin, Peng ; Xu, Fujun ; Yang, Xuelin ; Qin, Zhixin ; Ge, Weikun ; Shi, Junjie ; Shen, BoAdvanced materials (Weinheim), 2016-09, Vol.28 (36), p.7978-7983 [Periódico revisado por pares]Germany: Blackwell Publishing LtdTexto completo disponível |
7 |
Material Type: Artigo
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Fast-response solar-blind ultraviolet photodetector with a graphene/β-Ga2O3/graphene hybrid structureAi, Meilin ; Guo, Daoyou ; Qu, Yingyu ; Cui, Wei ; Wu, Zhenping ; Li, Peigang ; Li, Linghong ; Tang, WeihuaJournal of alloys and compounds, 2017-01, Vol.692, p.634-638 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
8 |
Material Type: Artigo
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Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β- Ga2O3 solar-blind ultraviolet photodetectorsGuo, D. Y. ; Wu, Z. P. ; An, Y. H. ; Guo, X. C. ; Chu, X. L. ; Sun, C. L. ; Li, L. H. ; Li, P. G. ; Tang, W. H.Applied physics letters, 2014-07, Vol.105 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
9 |
Material Type: Artigo
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Work function variation of monolayer MoS2 by nitrogen-dopingHu, Ce ; Yuan, Cailei ; Hong, Aijun ; Guo, Manman ; Yu, Ting ; Luo, XingfangApplied physics letters, 2018-07, Vol.113 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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A Steep Slope MBE-Grown Thin p-Ge Channel FETs on Bulk Ge-on-Si Using HZO Internal Voltage AmplificationChoudhary, Sumit ; Schwarz, Daniel ; Funk, Hannes S. ; Weishaupt, D. ; Khosla, Robin ; Sharma, Satinder K. ; Schulze, JorgIEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2725-2731 [Periódico revisado por pares]New York: IEEETexto completo disponível |