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Scintillation light yield of Tb:Sr2Gd8(SiO4)6O2
Scintillation light yield of Tb:Sr2Gd8(SiO4)6O2
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Scintillation light yield of Tb:Sr2Gd8(SiO4)6O2

Watanabe, Kenichi ; Yanagida, Takayuki ; Nakauchi, Daisuke ; Kawaguchi, Noriaki

Japanese Journal of Applied Physics, 2021-10, Vol.60 (10) [Periódico revisado por pares]

Tokyo: IOP Publishing

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2
Macro modeling of liquid crystal cell using machine learning method: reservoir computing approach
Macro modeling of liquid crystal cell using machine learning method: reservoir computing approach
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Macro modeling of liquid crystal cell using machine learning method: reservoir computing approach

Watanabe, Makoto ; Kotani, Kiyoshi ; Jimbo, Yasuhiko

Japanese Journal of Applied Physics, 2023-02, Vol.62 (2), p.27001 [Periódico revisado por pares]

Tokyo: IOP Publishing

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3
High-speed liquid crystal display simulation using parallel reservoir computing approach
High-speed liquid crystal display simulation using parallel reservoir computing approach
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High-speed liquid crystal display simulation using parallel reservoir computing approach

Watanabe, Makoto ; Kotani, Kiyoshi ; Jimbo, Yasuhiko

Japanese Journal of Applied Physics, 2022-08, Vol.61 (8), p.87001 [Periódico revisado por pares]

Tokyo: IOP Publishing

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4
Investigation of the interface between LiNbO3 and Si fabricated via room-temperature bonding method using activated Si nano layer
Investigation of the interface between LiNbO3 and Si fabricated via room-temperature bonding method using activated Si nano layer
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Investigation of the interface between LiNbO3 and Si fabricated via room-temperature bonding method using activated Si nano layer

Murakami, Seigo ; Watanabe, Kaname ; Takigawa, Ryo

Japanese Journal of Applied Physics, 2023-06, Vol.62 (SG), p.SG1041 [Periódico revisado por pares]

Tokyo: IOP Publishing

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5
Mechanism of the Production of Concentric Spread Plasma
Mechanism of the Production of Concentric Spread Plasma
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Mechanism of the Production of Concentric Spread Plasma

Sumita, Masahiro ; Watanabe, Seiichi

Japanese Journal of Applied Physics, 2001-02, Vol.40 (2R), p.819 [Periódico revisado por pares]

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6
Optimization of measurement in self-aligned liquid crystal optical control devices with two-slit Young’s experiment
Optimization of measurement in self-aligned liquid crystal optical control devices with two-slit Young’s experiment
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Optimization of measurement in self-aligned liquid crystal optical control devices with two-slit Young’s experiment

Watanabe, Tomoya ; Okada, Hiroyuki

Japanese Journal of Applied Physics, 2024-02, Vol.63 (2), p.2 [Periódico revisado por pares]

Tokyo: IOP Publishing

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7
Training dependency of neural network interatomic potential for molecular dynamics simulation of Ru-Si-O mixed system
Training dependency of neural network interatomic potential for molecular dynamics simulation of Ru-Si-O mixed system
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Training dependency of neural network interatomic potential for molecular dynamics simulation of Ru-Si-O mixed system

Hashimoto, Shuichiro ; Watanabe, Takanobu

Japanese Journal of Applied Physics, 2024-03, Vol.63 (3), p.3 [Periódico revisado por pares]

Tokyo: IOP Publishing

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8
Ultrasonic Electronics
Ultrasonic Electronics
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Ultrasonic Electronics

Watanabe, Yasuaki

Japanese Journal of Applied Physics, 2019-07, Vol.58 (SG), p.SG0001 [Periódico revisado por pares]

Tokyo: IOP Publishing

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9
Optimal conditions and generation mechanism of jet atomization for uniform distribution of nano- and micro-droplets
Optimal conditions and generation mechanism of jet atomization for uniform distribution of nano- and micro-droplets
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Optimal conditions and generation mechanism of jet atomization for uniform distribution of nano- and micro-droplets

Matsuura, Hiroshi ; Furukawa, Hiromitsu ; Watanabe, Yoshinori ; Murakami, Shin ; Ishihara, Yuji ; Tanikawa, Tamio ; Hashimoto, Hideki

Japanese Journal of Applied Physics, 2022-08, Vol.61 (8), p.85501 [Periódico revisado por pares]

Tokyo: IOP Publishing

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10
Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AlON gate insulator
Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AlON gate insulator
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Mobility enhancement in recessed-gate AlGaN/GaN MOS-HFETs using an AlON gate insulator

Hosoi, Takuji ; Watanabe, Kenta ; Nozaki, Mikito ; Yamada, Takahiro ; Shimura, Takayoshi ; Watanabe, Heiji

Japanese Journal of Applied Physics, 2019-06, Vol.58 (SC), p.SCCD16 [Periódico revisado por pares]

Tokyo: IOP Publishing

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