Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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11-Megapixel CMOS-Integrated SiGe Micromirror Arrays for High-End ApplicationsWitvrouw, A. ; Haspeslagh, L. ; Pedreira, O.V. ; De Coster, J. ; De Wolf, I. ; Tilmans, H.A.C. ; Bearda, T. ; Schlatmann, B. ; van Bommel, M. ; de Nooijer, M.-C. ; Magnee, P.H.C. ; Lous, E.J. ; Hagting, M. ; Lauria, J. ; Vanneer, R. ; van Drieenhuizen, B.Journal of microelectromechanical systems, 2010-02, Vol.19 (1), p.202-214 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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2 |
Material Type: Artigo
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A new trench bipolar transistor for RF applicationsHueting, R.J.E. ; Slotboom, J.W. ; Melai, J. ; Agarwal, P. ; Magnee, P.H.C.IEEE transactions on electron devices, 2004-07, Vol.51 (7), p.1108-1113 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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3 |
Material Type: Ata de Congresso
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Fast noise prediction for process optimization using only standard DC and S-parameter measurementsGridelet, E. ; Scholten, A. J. ; Klaassen, D. B. M. ; van Dalen, R. ; Pijper, R. ; Magnee, P. H. C. ; Tiemeijer, L. F. ; Dinh, V. T. ; Vanhoucke, T.2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, p.1-4IEEETexto completo disponível |
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4 |
Material Type: Ata de Congresso
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Layout and spacer optimization for high-frequency low-noise performance in HBT'sVanhoucke, T ; Donkers, J J T M ; Hurkx, G A M ; Magnee, P H C ; van Dalen, R ; Egbers, J H ; Klaassen, D B M2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010, p.53-56IEEETexto completo disponível |
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5 |
Material Type: Ata de Congresso
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SiGe:C profile optimization for low noise performanceMagnee, P. H. C. ; van Dalen, R. ; Mertens, H. ; Vanhoucke, T. ; van Velzen, B. ; Huiskamp, P. ; Brunets, I. ; Donkers, J. J. T. M. ; Klaassen, D. B. M.2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2011, p.166-169IEEETexto completo disponível |
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6 |
Material Type: Ata de Congresso
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Double-polysilicon self-aligned SiGe HBT architecture based on nonselective epitaxy and polysilicon reflowMertens, H. ; Magnee, P. H. C. ; Donkers, J. J. T. M. ; van Dalen, R. ; Brunets, I. ; Van Huylenbroeck, S. ; Vleugels, F. ; Vanhoucke, T.2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012, p.1-4IEEETexto completo disponível |
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7 |
Material Type: Ata de Congresso
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Virtual technology for RF process and device developmentVanhoucke, T. ; Klaassen, D. B. M. ; Mertens, H. ; Donkers, J. J. T. M. ; Hurkx, G. A. M. ; Huizing, H. G. A. ; Magnee, P. H. C. ; Hijzen, E. A. ; van Dalen, R. ; Gridelet, E. ; Slotboom, J. W.2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2011, p.37-44IEEETexto completo disponível |
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8 |
Material Type: Ata de Congresso
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Influence of output impedance on power added efficiency of Si-bipolar power transistorsvan Rijs, F. ; Dekker, R. ; Visser, H.A. ; Huizing, H.G.A. ; Hartskeerl, D. ; Magnee, P.H.C. ; Dondero, R.2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017), 2000, Vol.3, p.1945-1948 vol.3IEEETexto completo disponível |
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9 |
Material Type: Ata de Congresso
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"On-glass" process option for BiCMOS technologyAksen, E. ; van Noort, W.D. ; Bower, D. ; Bell, N. ; Dekker, R. ; de Boer, W. ; Rodriguez, A. ; Deixler, P. ; Havens, R.J. ; Magnee, P.H.C.Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting, 2004, p.64-67Piscataway NJ: IEEETexto completo disponível |
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10 |
Material Type: Ata de Congresso
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Ultra shallow boron base profile with carbon implantationMagnee, P.H.C. ; Kemmeren, A.L.A.M. ; Cowern, N.E.B. ; Slotboom, J.W. ; Havens, R.J. ; Huizing, H.G.A.Proceedings of the 2001 BIPOLAR/BiCMOS Circuits and Technology Meeting (Cat. No.01CH37212), 2001, p.64-67IEEETexto completo disponível |