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Refinado por: Nome da Publicação: Journal Of Applied Physics remover
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Publisher's Note: “Electronic structure tuning of α-SrSi2 by isotropic strain and isoelectronic impurity incorporation: A first-principles study for enhancement of low-temperature thermoelectric performance” [J. Appl. Phys. 130, 190903 (2021)]
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Publisher's Note: “Electronic structure tuning of α-SrSi2 by isotropic strain and isoelectronic impurity incorporation: A first-principles study for enhancement of low-temperature thermoelectric performance” [J. Appl. Phys. 130, 190903 (2021)]

Shiojiri, Daishi ; Iida, Tsutomu ; Yamaguchi, Masato ; Hirayama, Naomi ; Imai, Yoji

Journal of applied physics, 2021-12, Vol.130 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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Publisher's Note: “Dynamics of H atoms surface recombination in low-temperature plasma” [J. Appl. Phys. 132, 193301 (2022)]
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Publisher's Note: “Dynamics of H atoms surface recombination in low-temperature plasma” [J. Appl. Phys. 132, 193301 (2022)]

Gubarev, V. ; Lopaev, D. ; Zotovich, A. ; Medvedev, V. ; Krainov, P. ; Astakhov, D. ; Zyryanov, S.

Journal of applied physics, 2023-01, Vol.133 (2) [Periódico revisado por pares]

Melville: American Institute of Physics

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3
Perspective: The physics, diagnostics, and applications of atmospheric pressure low temperature plasma sources used in plasma medicine
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Perspective: The physics, diagnostics, and applications of atmospheric pressure low temperature plasma sources used in plasma medicine

Laroussi, M. ; Lu, X. ; Keidar, M.

Journal of applied physics, 2017-07, Vol.122 (2) [Periódico revisado por pares]

Melville: American Institute of Physics

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4
Low-temperature high-yield fabrication of colloidal Si quantum dots with in situ tunability for luminescence band from red to green
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Low-temperature high-yield fabrication of colloidal Si quantum dots with in situ tunability for luminescence band from red to green

Higuchi, Takayuki ; Koshida, Nobuyoshi ; Nakamura, Toshihiro

Journal of applied physics, 2024-03, Vol.135 (9) [Periódico revisado por pares]

Melville: American Institute of Physics

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Thermal annealing of GaN implanted with Be
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Thermal annealing of GaN implanted with Be

Reshchikov, M. A. ; Andrieiev, O. ; Vorobiov, M. ; Ye, D. ; Demchenko, D. O. ; Sierakowski, K. ; Bockowski, M. ; McEwen, B. ; Meyers, V. ; Shahedipour-Sandvik, F.

Journal of applied physics, 2022-03, Vol.131 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

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6
High cryogenic ductility of the high-entropy alloy CoCrFeNiAl0.1Ti0.05 at 77 K
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High cryogenic ductility of the high-entropy alloy CoCrFeNiAl0.1Ti0.05 at 77 K

Jiang, Mingyue ; Wang, Zekun ; Su, Haojian ; Jiang, Di ; Huang, Chuanjun ; Zhou, Min ; Huang, Rongjin ; Li, Laifeng

Journal of applied physics, 2023-11, Vol.134 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects
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Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospects

Hoo Teo, Koon ; Zhang, Yuhao ; Chowdhury, Nadim ; Rakheja, Shaloo ; Ma, Rui ; Xie, Qingyun ; Yagyu, Eiji ; Yamanaka, Koji ; Li, Kexin ; Palacios, Tomás

Journal of applied physics, 2021-10, Vol.130 (16) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Strain-tuned optical conductivity of monolayer PbBiI
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Strain-tuned optical conductivity of monolayer PbBiI

Hoi, Bui D.

Journal of applied physics, 2023-07, Vol.134 (4) [Periódico revisado por pares]

Melville: American Institute of Physics

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9
Electron dynamics in low pressure capacitively coupled radio frequency discharges
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Electron dynamics in low pressure capacitively coupled radio frequency discharges

Wilczek, S. ; Schulze, J. ; Brinkmann, R. P. ; Donkó, Z. ; Trieschmann, J. ; Mussenbrock, T.

Journal of applied physics, 2020-05, Vol.127 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
Determination of CN deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach
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Determination of CN deep donor level in p-GaN with heavy Mg doping via a carrier statistics approach

Huang, Huayang ; Yang, Xuelin ; Shen, Zhaohua ; Chen, Zhenghao ; Tang, Ning ; Xu, Fujun ; Wang, Xinqiang ; Ge, Weikun ; Shen, Bo

Journal of applied physics, 2023-03, Vol.133 (12) [Periódico revisado por pares]

Melville: American Institute of Physics

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