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Material Type: Artigo
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Publisher's Note: “Electronic structure tuning of α-SrSi2 by isotropic strain and isoelectronic impurity incorporation: A first-principles study for enhancement of low-temperature thermoelectric performance” [J. Appl. Phys. 130, 190903 (2021)]Shiojiri, Daishi ; Iida, Tsutomu ; Yamaguchi, Masato ; Hirayama, Naomi ; Imai, YojiJournal of applied physics, 2021-12, Vol.130 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Publisher's Note: “Dynamics of H atoms surface recombination in low-temperature plasma” [J. Appl. Phys. 132, 193301 (2022)]Gubarev, V. ; Lopaev, D. ; Zotovich, A. ; Medvedev, V. ; Krainov, P. ; Astakhov, D. ; Zyryanov, S.Journal of applied physics, 2023-01, Vol.133 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Perspective: The physics, diagnostics, and applications of atmospheric pressure low temperature plasma sources used in plasma medicineLaroussi, M. ; Lu, X. ; Keidar, M.Journal of applied physics, 2017-07, Vol.122 (2) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Low-temperature high-yield fabrication of colloidal Si quantum dots with in situ tunability for luminescence band from red to greenHiguchi, Takayuki ; Koshida, Nobuyoshi ; Nakamura, ToshihiroJournal of applied physics, 2024-03, Vol.135 (9) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Thermal annealing of GaN implanted with BeReshchikov, M. A. ; Andrieiev, O. ; Vorobiov, M. ; Ye, D. ; Demchenko, D. O. ; Sierakowski, K. ; Bockowski, M. ; McEwen, B. ; Meyers, V. ; Shahedipour-Sandvik, F.Journal of applied physics, 2022-03, Vol.131 (12) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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High cryogenic ductility of the high-entropy alloy CoCrFeNiAl0.1Ti0.05 at 77 KJiang, Mingyue ; Wang, Zekun ; Su, Haojian ; Jiang, Di ; Huang, Chuanjun ; Zhou, Min ; Huang, Rongjin ; Li, LaifengJournal of applied physics, 2023-11, Vol.134 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Emerging GaN technologies for power, RF, digital, and quantum computing applications: Recent advances and prospectsHoo Teo, Koon ; Zhang, Yuhao ; Chowdhury, Nadim ; Rakheja, Shaloo ; Ma, Rui ; Xie, Qingyun ; Yagyu, Eiji ; Yamanaka, Koji ; Li, Kexin ; Palacios, TomásJournal of applied physics, 2021-10, Vol.130 (16) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Strain-tuned optical conductivity of monolayer PbBiIHoi, Bui D.Journal of applied physics, 2023-07, Vol.134 (4) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Electron dynamics in low pressure capacitively coupled radio frequency dischargesWilczek, S. ; Schulze, J. ; Brinkmann, R. P. ; Donkó, Z. ; Trieschmann, J. ; Mussenbrock, T.Journal of applied physics, 2020-05, Vol.127 (18) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Determination of CN deep donor level in p-GaN with heavy Mg doping via a carrier statistics approachHuang, Huayang ; Yang, Xuelin ; Shen, Zhaohua ; Chen, Zhenghao ; Tang, Ning ; Xu, Fujun ; Wang, Xinqiang ; Ge, Weikun ; Shen, BoJournal of applied physics, 2023-03, Vol.133 (12) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |