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Dependence of electrical properties on film thickness in Pb(ZrxTi1-x)O3 thin films produced by metalorganic chemical vapor deposition
Dependence of electrical properties on film thickness in Pb(ZrxTi1-x)O3 thin films produced by metalorganic chemical vapor deposition
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Dependence of electrical properties on film thickness in Pb(ZrxTi1-x)O3 thin films produced by metalorganic chemical vapor deposition

SAKASHITA, Y ; SEGAWA, H ; TOMINAGA, K ; OKADA, M

Journal of applied physics, 1993-06, Vol.73 (11), p.7857-7863 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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2
Preparation and electrical properties of MOCVD-deposited PZT thin films
Preparation and electrical properties of MOCVD-deposited PZT thin films
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Preparation and electrical properties of MOCVD-deposited PZT thin films

SAKASHITA, Y ; ONO, T ; SEGAWA, H ; TOMINAGA, K ; OKADA, M

Journal of applied physics, 1991-06, Vol.69 (12), p.8352-8356 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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3
Epitaxial growth and magnetic properties of Fe(211)
Epitaxial growth and magnetic properties of Fe(211)
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Epitaxial growth and magnetic properties of Fe(211)

YAEGASHI, S ; KURIHARA, T ; SEGAWA, H

Journal of applied physics, 1993-10, Vol.74 (7), p.4506-4512 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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4
Effect of pressure on resistivity of single crystalline URu2Si2
Effect of pressure on resistivity of single crystalline URu2Si2
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Effect of pressure on resistivity of single crystalline URu2Si2

IDO, M ; SEGAWA, Y ; AMITSUKA, H ; MIYAKO, Y

Journal of the Physical Society of Japan, 1993, Vol.62 (8), p.2962-2963 [Periódico revisado por pares]

Tokyo: Institute of Pure and Applied Physics

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5
Observation of increased photoluminescence decay time in strain-induced quantum-well dots
Observation of increased photoluminescence decay time in strain-induced quantum-well dots
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Observation of increased photoluminescence decay time in strain-induced quantum-well dots

I-HSING TAN ; YING-LAN CHANG ; MIRIN, R ; HU, E ; MERZ, J ; YASUDA, T ; SEGAWA, Y

Applied physics letters, 1993-03, Vol.62 (12), p.1376-1378 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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6
Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method
Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method
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Carrier dynamics at surface and interface in hydrogenated amorphous silicon observed by the transient grating method

KOMURO, S ; AOYAGI, Y ; SEGAWA, Y ; NAMBA, S ; MASUYAMA, A ; OKAMOTO, H ; HAMAKAWA, Y

Applied physics letters, 1983-11, Vol.43 (10), p.968-970 [Periódico revisado por pares]

Melville, NY: American Institute of Physics

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7
Observation of ion confining potential enhancement due to thermal barrier potential formation and its scaling law in the tandem mirror GAMMA 10
Observation of ion confining potential enhancement due to thermal barrier potential formation and its scaling law in the tandem mirror GAMMA 10
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Observation of ion confining potential enhancement due to thermal barrier potential formation and its scaling law in the tandem mirror GAMMA 10

CHO, T ; FOOTE, J. H ; MIYOSHI, S ; NAKASHIMA, Y ; ISHII, K ; SUGAWARA, H ; YOKOYAMA, M ; SEGAWA, T ; KONDOH, T ; KATANUMA, I ; KIWAMOTO, Y

Journal of the Physical Society of Japan, 1987, Vol.56 (11), p.3775-3778 [Periódico revisado por pares]

Tokyo: Institute of Pure and Applied Physics

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8
Steady-state and time-resolved photoluminescence in microcrystalline silicon
Steady-state and time-resolved photoluminescence in microcrystalline silicon
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Steady-state and time-resolved photoluminescence in microcrystalline silicon

KOMURO, S ; AOYAGI, Y ; SEGAWA, Y ; NAMBA, S ; MASUYAMA, A ; KRUANGAM, D ; OKAMOTO, H ; HAMAKAWA, Y

Journal of applied physics, 1985-01, Vol.58 (2), p.943-947 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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9
Diffusion of carbon atoms in hydrogenated amorphous silicon carbide into hydrogenated amorphous silicon through the interface
Diffusion of carbon atoms in hydrogenated amorphous silicon carbide into hydrogenated amorphous silicon through the interface
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Diffusion of carbon atoms in hydrogenated amorphous silicon carbide into hydrogenated amorphous silicon through the interface

KOMURO, S ; AOYAGI, Y ; SEGAWA, Y ; NAMBA, S ; MASUYAMA, A ; OKAMOTO, H ; HAMAKAWA, Y

Journal of applied physics, 1984-01, Vol.55 (10), p.3866-3867 [Periódico revisado por pares]

Woodbury, NY: American Institute of Physics

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