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Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality
Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality
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Sb-saturated high-temperature growth of extended, self-catalyzed GaAsSb nanowires on silicon with high quality

Schmiedeke, P ; Döblinger, M ; Meinhold-Heerlein, M A ; Doganlar, C ; Finley, J J ; Koblmüller, G

Nanotechnology, 2024-01, Vol.35 (5), p.55601 [Periódico revisado por pares]

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2
Electrical control of the exciton-biexciton splitting in self-assembled InGaAs quantum dots
Electrical control of the exciton-biexciton splitting in self-assembled InGaAs quantum dots
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Electrical control of the exciton-biexciton splitting in self-assembled InGaAs quantum dots

Kaniber, M ; Huck, M F ; Müller, K ; Clark, E C ; Troiani, F ; Bichler, M ; Krenner, H J ; Finley, J J

Nanotechnology, 2011-08, Vol.22 (32), p.325202-1-4 [Periódico revisado por pares]

England

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3
Optical study of lithographically defined, subwavelength plasmonic wires and their coupling to embedded quantum emitters
Optical study of lithographically defined, subwavelength plasmonic wires and their coupling to embedded quantum emitters
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Optical study of lithographically defined, subwavelength plasmonic wires and their coupling to embedded quantum emitters

Bracher, G ; Schraml, K ; Ossiander, M ; Frédérick, S ; Finley, J J ; Kaniber, M

Nanotechnology, 2014-02, Vol.25 (7), p.075203-6 [Periódico revisado por pares]

Bristol: IOP Publishing

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4
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability
Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability
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Rate-limiting mechanisms in high-temperature growth of catalyst-free InAs nanowires with large thermal stability

Hertenberger, S ; Rudolph, D ; Becker, J ; Bichler, M ; Finley, J J ; Abstreiter, G ; Koblmüller, G

Nanotechnology, 2012-06, Vol.23 (23), p.235602-235602 [Periódico revisado por pares]

England: IOP Publishing

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5
An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step
An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step
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An atomically resolved study of InGaAs quantum dot layers grown with an indium flush step

Keizer, J G ; Clark, E C ; Bichler, M ; Abstreiter, G ; Finley, J J ; Koenraad, P M

Nanotechnology, 2010-05, Vol.21 (21), p.215705-215705 [Periódico revisado por pares]

England: IOP Publishing

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