Nucleation and growth of atomically thin hexagonal boron nitride on Ni/MgO(111) by molecular beam epitaxy

Nakhaie, Siamak ; Heilmann, Martin ; Krause, Thilo ; Hanke, Michael ; Lopes, J. Marcelo J.

Journal of applied physics, 2019-03, Vol.125 (11) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Extended optical theorem in isotropic solids and its application to the elastic radiation force

Leão-Neto, J. P. ; Lopes, J. H. ; Silva, G. T.

Journal of applied physics, 2017-04, Vol.121 (14) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Spectroscopic characterization and imaging of laser- and unipolar arc-induced plasmas

Aussems, Damien U. B. ; Nishijima, Daisuke ; Brandt, Christian ; Doerner, Russell P. ; Cardozo, Niek J. Lopes

Journal of applied physics, 2014-08, Vol.116 (6) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

Optical detection of graphene nanoribbons synthesized on stepped SiC surfaces

Lastras-Martínez, L. F. ; Almendarez-Rodríguez, J. ; Flores-Rangel, G. ; Ulloa-Castillo, N. A. ; Ruiz-Cigarrillo, O. ; Ibarra-Becerra, C. A. ; Castro-García, R. ; Balderas-Navarro, R. E. ; Oliveira, M. H. ; Lopes, J. M. J.

Journal of applied physics, 2017-07, Vol.122 (3) [Periódico revisado por pares]

Melville: American Institute of Physics

Texto completo disponível

On the nature of the interfacial layer in ultra-thin TiN/LaLuO3 gate stacks

Mitrovic, I. Z. ; Hall, S. ; Sedghi, N. ; Simutis, G. ; Dhanak, V. R. ; Bailey, P. ; Noakes, T. C. Q. ; Alexandrou, I. ; Engstrom, O. ; Lopes, J. M. J. ; Schubert, J.

Journal of applied physics, 2012-08, Vol.112 (4), p.044102 [Periódico revisado por pares]

Texto completo disponível

Effects of annealing on the electrical and interfacial properties of amorphous lanthanum scandate high- κ films prepared by molecular beam deposition

Lopes, J M. J ; Littmark, U ; Roeckerath, M ; Lenk, St ; Schubert, J ; Mantl, S ; Besmehn, A

Journal of applied physics, 2007-05, Vol.101 (10), p.104109-104109-5 [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Cluster coarsening and luminescence emission intensity of Ge nanoclusters in SiO2 layers

Lopes, J. M. J. ; Zawislak, F. C. ; Behar, M. ; Fichtner, P. F. P. ; Rebohle, L. ; Skorupa, W.

Journal of applied physics, 2003-11, Vol.94 (9), p.6059-6064 [Periódico revisado por pares]

Texto completo disponível

Photoconductivity of Hf-based binary metal oxide systems

Shamuilia, S ; Afanas'ev, V V ; Stesmans, A ; McCarthy, I ; Campbell, S A ; Boutchich, M ; Roeckerath, M ; Heeg, T ; Lopes, J M. J ; Schubert, J

Journal of applied physics, 2008-12, Vol.104 (11), p.114103-114103-6 [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível

Modeling and experiments on differential pumping in linear plasma generators operating at high gas flows

van Eck, H J. N ; Koppers, W R ; van Rooij, G J ; Goedheer, W J ; Engeln, R ; Schram, D C ; Cardozo, N J. Lopes ; Kleyn, A W

Journal of applied physics, 2009-03, Vol.105 (6), p.063307-063307-11 [Periódico revisado por pares]

United States: American Institute of Physics

Texto completo disponível

Structural and optical properties of InP quantum dots grown on GaAs(001)

de Godoy, M P. F ; Nakaema, M K. K ; Iikawa, F ; Brasil, M J. S. P ; Lopes, J M. J ; Bortoleto, J R. R ; Cotta, M A ; Magalhães-Paniago, R ; Mörschbächer, M J ; Fichtner, P F. P

Journal of applied physics, 2007-04, Vol.101 (7), p.073508-073508-6 [Periódico revisado por pares]

American Institute of Physics

Texto completo disponível