Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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GaN-on-Si Power Technology: Devices and ApplicationsChen, Kevin J. ; Haberlen, Oliver ; Lidow, Alex ; Chun Lin Tsai ; Ueda, Tetsuzo ; Uemoto, Yasuhiro ; Yifeng WuIEEE transactions on electron devices, 2017-03, Vol.64 (3), p.779-795 [Periódico revisado por pares]New York: IEEETexto completo disponível |
2 |
Material Type: Artigo
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Superjunction Power Devices, History, Development, and Future ProspectsUdrea, Florin ; Deboy, Gerald ; Fujihira, TatsuhikoIEEE transactions on electron devices, 2017-03, Vol.64 (3), p.713-727 [Periódico revisado por pares]New York: IEEETexto completo disponível |
3 |
Material Type: Artigo
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The Past, the Present, and the Future of Ferroelectric MemoriesMikolajick, T. ; Schroeder, U. ; Slesazeck, S.IEEE transactions on electron devices, 2020-04, Vol.67 (4), p.1-10 [Periódico revisado por pares]IEEETexto completo disponível |
4 |
Material Type: Artigo
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Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile MemoriesYurchuk, Ekaterina ; Muller, Johannes ; Muller, Stefan ; Paul, Jan ; Pesic, Milan ; van Bentum, Ralf ; Schroeder, Uwe ; Mikolajick, ThomasIEEE transactions on electron devices, 2016-09, Vol.63 (9), p.3501-3507 [Periódico revisado por pares]New York: IEEETexto completo disponível |
5 |
Material Type: Artigo
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Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High PerformanceMulaosmanovic, Halid ; Breyer, Evelyn T. ; Mikolajick, Thomas ; Slesazeck, StefanIEEE transactions on electron devices, 2019-09, Vol.66 (9), p.3828-3833 [Periódico revisado por pares]IEEETexto completo disponível |
6 |
Material Type: Artigo
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Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight ElementBurr, Geoffrey W. ; Shelby, Robert M. ; Sidler, Severin ; di Nolfo, Carmelo ; Junwoo Jang ; Boybat, Irem ; Shenoy, Rohit S. ; Narayanan, Pritish ; Virwani, Kumar ; Giacometti, Emanuele U. ; Kurdi, Bulent N. ; Hyunsang HwangIEEE transactions on electron devices, 2015-11, Vol.62 (11), p.3498-3507 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Changes in the Editorial BoardFay, PatrickIEEE transactions on electron devices, 2024-05, Vol.71 (5), p.2841-2843 [Periódico revisado por pares]New York: IEEETexto completo disponível |
8 |
Material Type: Artigo
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Si 3 N 4 Passivation and Side Illumination of High-Power Photoconductive Semiconductor Switch Based on Free-Standing SI-GaNYang, Xianghong ; Hu, Long ; Liu, Jingliang ; Duan, Xue ; Li, Xin ; Liu, Weihua ; Han, ChuanyuIEEE transactions on electron devices, 2023-03, Vol.70 (3), p.1128-1133 [Periódico revisado por pares]Texto completo disponível |
9 |
Material Type: Artigo
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Critical Role of Interlayer in Hf0.5Zr0.5O2 Ferroelectric FET Nonvolatile Memory PerformanceNi, Kai ; Sharma, Pankaj ; Zhang, Jianchi ; Jerry, Matthew ; Smith, Jeffery A. ; Tapily, Kandabara ; Clark, Robert ; Mahapatra, Souvik ; Datta, SumanIEEE transactions on electron devices, 2018-06, Vol.65 (6), p.2461-2469 [Periódico revisado por pares]IEEETexto completo disponível |
10 |
Material Type: Artigo
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Phase-Change Memory-Towards a Storage-Class MemoryFong, Scott W. ; Neumann, Christopher M. ; Wong, H.-S PhilipIEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4374-4385 [Periódico revisado por pares]IEEETexto completo disponível |