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Refinado por: Base de dados/Biblioteca: NORA - Norwegian Open Research Archives remover assunto: Silicon Carbide remover Physical Review. B remover
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Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC
Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC
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Conversion pathways of primary defects by annealing in proton-irradiated n-type 4H-SiC

Karsthof, Robert ; Bathen, Marianne Etzelmüller ; Galeckas, Augustinas ; Vines, Lasse

Physical review. B, 2020-11, Vol.102 (18), p.1 [Periódico revisado por pares]

College Park: American Physical Society

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Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment
Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment
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Anisotropic and plane-selective migration of the carbon vacancy in SiC: Theory and experiment

Bathen, M. E. ; Coutinho, J. ; Ayedh, H. M. ; Ul Hassan, J. ; Farkas, I. ; Öberg, S. ; Frodason, Y. K. ; Svensson, B. G. ; Vines, L.

Physical review. B, 2019, Vol.100 (1), p.014103, Article 014103 [Periódico revisado por pares]

College Park: American Physical Society

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Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide
Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide
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Resolving Jahn-Teller induced vibronic fine structure of silicon vacancy quantum emission in silicon carbide

Bathen, Marianne Etzelmüller ; Galeckas, Augustinas ; Karsthof, Robert ; Delteil, Aymeric ; Sallet, Vincent ; Kuznetsov, Andrej Yu ; Vines, Lasse

Physical review. B, 2021-07, Vol.104 (4), p.1, Article 045120 [Periódico revisado por pares]

College Park: American Physical Society

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