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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Artigo
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Data Allocation Optimization for Hybrid Scratch Pad Memory With SRAM and Nonvolatile MemoryJingtong Hu ; Xue, C. J. ; Qingfeng Zhuge ; Wei-Che Tseng ; Sha, E. H.IEEE transactions on very large scale integration (VLSI) systems, 2013-06, Vol.21 (6), p.1094-1102 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 2 |
Material Type: Artigo
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Recent progress in resistive random access memories: Materials, switching mechanisms, and performancePan, F. ; Gao, S. ; Chen, C. ; Song, C. ; Zeng, F.Materials science & engineering. R, Reports : a review journal, 2014-09, Vol.83, p.1-59 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |
| 3 |
Material Type: Artigo
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A 1 Mb Nonvolatile Embedded Memory Using 4T2MTJ Cell With 32 b Fine-Grained Power Gating SchemeOhsawa, Takashi ; Koike, Hiroki ; Miura, Sadahiko ; Honjo, Hiroaki ; Kinoshita, Keizo ; Ikeda, Shoji ; Hanyu, Takahiro ; Ohno, Hideo ; Endoh, TetsuoIEEE journal of solid-state circuits, 2013-06, Vol.48 (6), p.1511-1520 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 4 |
Material Type: Artigo
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Memristor MOS Content Addressable Memory (MCAM): Hybrid Architecture for Future High Performance Search EnginesEshraghian, Kamran ; Kyoung-Rok Cho ; Kavehei, Omid ; Soon-Ku Kang ; Abbott, Derek ; Sung-Mo Steve KangIEEE transactions on very large scale integration (VLSI) systems, 2011-08, Vol.19 (8), p.1407-1417 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 5 |
Material Type: Artigo
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Recent advances in polymer shape memoryXie, TaoPolymer (Guilford), 2011-10, Vol.52 (22), p.4985-5000 [Periódico revisado por pares]Kidlington: Elsevier LtdTexto completo disponível |
| 6 |
Material Type: Artigo
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Homogeneous barrier modulation of TaOx TiO2 bilayers for ultra-high endurance three-dimensional storage-class memoryHsu, Chung-Wei ; Wang, Yu-Fen ; Wan, Chia-Chen ; Wang, I-Ting ; Chou, Chun-Tse ; Lai, Wei-Li ; Lee, Yao-Jen ; Hou, Tuo-HungNanotechnology, 2014-04, Vol.25 (16), p.165202-165202 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
| 7 |
Material Type: Artigo
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Design of Spin-Torque Transfer Magnetoresistive RAM and CAM/TCAM with High Sensing and Search SpeedXu, Wei ; Zhang, Tong ; Chen, YiranIEEE transactions on very large scale integration (VLSI) systems, 2010-01, Vol.18 (1), p.66-74 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 8 |
Material Type: Artigo
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Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM-Part II: ModelingLarentis, Stefano ; Nardi, Federico ; Balatti, Simone ; Gilmer, David C. ; Ielmini, DanieleIEEE transactions on electron devices, 2012-09, Vol.59 (9), p.2468-2475 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 9 |
Material Type: Artigo
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A 32-Mb SPRAM With 2T1R Memory Cell, Localized Bi-Directional Write Driver and `1'/`0' Dual-Array Equalized Reference SchemeTakemura, R. ; Kawahara, T. ; Miura, K. ; Yamamoto, H. ; Hayakawa, J. ; Matsuzaki, N. ; Ono, K. ; Yamanouchi, M. ; Ito, K. ; Takahashi, H. ; Ikeda, S. ; Hasegawa, H. ; Matsuoka, H. ; Ohno, H.IEEE journal of solid-state circuits, 2010-04, Vol.45 (4), p.869-879 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
| 10 |
Material Type: Artigo
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Concurrent Average Memory Access TimeSun, Xian-He ; Wang, DaweiComputer (Long Beach, Calif.), 2014-05, Vol.47 (5), p.74-80 [Periódico revisado por pares]New York, NY: IEEETexto completo disponível |
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