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| Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
|---|---|---|---|
| 1 |
Material Type: Conference Paper
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Interaction of InGaAs/GaAs quantum wells with surface plasmon polaritonsF. W. A. Sobreira Haroldo Arakaki; Rodrigo Gonçalves Pereira; Euclydes Marega Júnior; Encontro Nacional de Física da Matéria Condensada (36. 2013 Águas de Lindóia)Resumos São Paulo : Sociedade Brasileira de Física - SBF, 2013São Paulo Sociedade Brasileira de Física - SBF 2013Online access. The library also has physical copies. |
| 2 |
Material Type: Article
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Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substratesA F G Monte M A G Soler; S W da Silva; B B D Rodrigues; P C Morais; A. A Quivy (Alain André); J. R Leite (José Roberto)Physica E v. 23, n. 3-4, p. 466-470, 2004Amsterdam 2004Online access |
| 3 |
Material Type: Article
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Carrier diffusion in InGaAs/GaAs quantum wells grow on vicinal GaAs(001) substratesA F G Monte M A G Soler; S W da Silva; B B D Rodrigues; P C Morais; A. A Quivy (Alain André); J. R Leite (José Roberto)Physica E v. 23, n. 3-4, p. 466-470, 2004Amsterdam 2004Online access |
| 4 |
Material Type: Article
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Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfacesS. Martini (Sandro) A. A Quivy (Alain André); D Ugarte; C Lange; W Richter; V E TokranovJournal of Crystal Growth Amsterdam v. 227, p. 46-50, 2001Amsterdam 2001Online access |
| 5 |
Material Type: Article
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Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wellsE Laureto E A Meneses; W Carvalho Junior; A A Bernussi; E Ribeiro; Euzi Conceicao Fernandes da Silva; J B B de OliveiraBrazilian Journal of Physics São Paulo v. 32, n. 2A, p. 314-317, 2002São Paulo 2002Online access |
| 6 |
Material Type: Article
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Step bunching in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on GaAs(001) vicinal surfacesS. Martini (Sandro) A. A Quivy (Alain André); D Ugarte; C Lange; W Richter; V E TokranovJournal of Crystal Growth Amsterdam v. 227, p. 46-50, 2001Amsterdam 2001Online access |
| 7 |
Material Type: Article
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Optical studies of the correlation between interface disorder and the photoluminescence line shape in GaAs/InGaP quantum wellsE Laureto E A Meneses; W Carvalho Junior; A A Bernussi; E Ribeiro; Euzi Conceicao Fernandes da Silva; J B B de OliveiraBrazilian Journal of Physics São Paulo v. 32, n. 2A, p. 314-317, 2002São Paulo 2002Online access |
| 8 |
Material Type: Article
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Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wellsJ F R Cunha S W da Silva; P C Morais; T. E Lamas (Tomás Erikson); A. A Quivy (Alain André)Journal of Applied Physics v. 102, n. 4, p. 0437048/1-043704/6, 2007New York 2007Online access |
| 9 |
Material Type: Article
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Influence of the optical control in the lateral transport of carriers in InGaAs/GaAs one-side modulation-doped quantum wellsJ F R Cunha S W da Silva; P C Morais; T. E Lamas (Tomás Erikson); A. A Quivy (Alain André)Journal of Applied Physics v. 102, n. 4, p. 0437048/1-043704/6, 2007New York 2007Online access |
| 10 |
Material Type: Article
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Step-bunching evidence in strained 'In IND.X' 'Ga IND.1-X'As/GaAs quantum wells grown on vicinal (001) substratesF V de Sales M A G Soler; D Ugarte; A. A Quivy (Alain André); S W da Silva; S Martini; P C MoraisPhysica Status Solidi A - Applied Research Berlin v. 187, n. 1, p. 253-256, 2001Berlin 2001Online access |
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