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Resultados de 1 a 10 de 145  para Produção Intelectual da USP

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Refinado por: Nome da Publicação: Journal of Applied Physics remover nível superior: Recursos Online remover
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1
Preface to Special Topic Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008
Preface to Special Topic Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008
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Preface to Special Topic Plenary and Invited Papers from the 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2008

Marília Junqueira Caldas Nelson Studart; International Conference on the Physics of Semiconductors 29th 2008 Rio de Janeiro, Brasil

Journal of Applied Physics, v. 105, n. 12, p. 122301/1-122301/2, 2009

Melville AIP 2009

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2
Critical behavior of the magnetization in the spin-gapped system `NiCl IND.2´4SC`(`NH IND.2´) IND.2´
Critical behavior of the magnetization in the spin-gapped system `NiCl IND.2´4SC`(`NH IND.2´) IND.2´
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Critical behavior of the magnetization in the spin-gapped system `NiCl IND.2´4SC`(`NH IND.2´) IND.2´

A. Paduan-Filho (Armando) K A Al-Hassanieh; P Sengupta; V S Zapf; M Jaime; A Lacerda; M Kenzelmannm; Annual Conference on Magnetism and Magnetic Materials 53rd 2008 Austin, TX

Journal of Applied Physics, v. 105, n. 7, p. 07D501/1-07D501-3, 2009

Melville AIP 2009

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3
Magnetic irreversibility in ultrafine Zn'Fe IND.2''O IND.4'
Magnetic irreversibility in ultrafine Zn'Fe IND.2''O IND.4'
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Magnetic irreversibility in ultrafine Zn'Fe IND.2''O IND.4'

G. F. Goya Hercilio Rodolfo Rechenberg; Chen, M; Yelon, W B

Journal of Applied Physics Woodbury v. 87, n. 11, p. 8005-8007, 2000

Woodbury 2000

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4
Magnetic properties of polycrystalline Ln'Ni IND.0.3''Co IND.0.7''O IND.3' (Ln=La, P) compounds
Magnetic properties of polycrystalline Ln'Ni IND.0.3''Co IND.0.7''O IND.3' (Ln=La, P) compounds
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Magnetic properties of polycrystalline Ln'Ni IND.0.3''Co IND.0.7''O IND.3' (Ln=La, P) compounds

M T Escote Carlos Henrique Westphal; R. F Jardim (Renato Figueiredo)

Journal of Applied Physics Woodbury v. 87, n. 9, p. 5908-5910, 2000

Woodbury 2000

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5
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures
Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures
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Raman measurement of vertical conductivity and localization effects in strongly coupled semiconductor periodical structures

Yuri A. Pusep M T O Silva; J C Galzerani; S C P Rodrigues; Luisa Maria Ribeiro Scolfaro; A. P Lima; A. A Quivy (Alain André); J. R Leite (José Roberto); N T Moshegov; P Basmaji

Journal of Applied Physics Woodbury v. 87, n. 4, p. 1825-1831, 2000

Woodbury 2000

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6
Structural and magnetic properties of the exchange-coupled PrFeB alloys
Structural and magnetic properties of the exchange-coupled PrFeB alloys
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Structural and magnetic properties of the exchange-coupled PrFeB alloys

Regina Keiko Murakami Valquíria Villas-Boas; M Chen; W B Yelon

Journal of Applied Physics Woodbury v. 87, n. 9, p. 6582-6584, 2000

Woodbury 2000

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7
Preisach analysis of reversible magnetization in SmCo/Fe films
Preisach analysis of reversible magnetization in SmCo/Fe films
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Preisach analysis of reversible magnetization in SmCo/Fe films

Daniel R Cornejo Frank Patrick Missell

Journal of Applied Physics San Diego v. 87, n. 9, pt. 1-3, p. 4741-4743, 2000

San Diego 2000

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8
Reversible and irreversible magnetization in hybrid magnets
Reversible and irreversible magnetization in hybrid magnets
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Reversible and irreversible magnetization in hybrid magnets

Marilia Emura Daniel Reinaldo Cornejo; Frank Patrick Missell

Journal of Applied Physics Woodbury v. 87, n. 3, p. 1387-1394, 2000

Woodbury 2000

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9
Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition
Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition
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Influence of ion energy and arrival rate on x-ray crystallographic properties of thin Zr'O IND.X' films prepared on Si(111) substrate by ion-beam assisted deposition

Masao Matsuoka 1949- Sadao Isotani; Jose Fernando Diniz Chubaci; S Miyake; Y Setsuhara; K Ogata; N Kuratani

Journal of Applied Physics Woodbury v. 88, n. 6, p. 3773-3775, 2000

Woodbury 2000

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10
Site occupancy of Sm in '('Nd IND.1-X''Sm IND.X') IND.5' '(Fe IND.1-Y''Ti IND.Y')'
Site occupancy of Sm in '('Nd IND.1-X''Sm IND.X') IND.5' '(Fe IND.1-Y''Ti IND.Y')'
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Site occupancy of Sm in '('Nd IND.1-X''Sm IND.X') IND.5' '(Fe IND.1-Y''Ti IND.Y')'

Z Chu W B Yelon; Frank Patrick Missell; Regina Keiko Murakami

Journal of Applied Physics Melville v. 87, n. 9, pt. 3, p. 6704-6706, 2000

Melville 2000

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Deste Autor:

  1. Jardim, R
  2. Salvadori, M
  3. Teixeira, F
  4. Leite, J
  5. Quivy, A

Neste Assunto:

  1. Semicondutores
  2. Filmes Finos
  3. Difração Por Raios X
  4. Física
  5. Estrutura Eletrônica

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