Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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Material Type: Artigo
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Vibrational lifetime of bond-center hydrogen in crystalline siliconBudde, M ; Lupke, G ; Parks Cheney C ; Tolk, NH ; Feldman, LCPhysical review letters, 2000-08, Vol.85 (7), p.1452-1455 [Periódico revisado por pares]United StatesTexto completo disponível |
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Material Type: Artigo
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Effect of energetic ions on the stability of bond-center hydrogen in siliconNageswara Rao, S. V. S. ; Dixit, S. K. ; Lüpke, G. ; Tolk, N. H. ; Feldman, L. C.Physical review. B, Condensed matter and materials physics, 2007-06, Vol.75 (23), Article 235202 [Periódico revisado por pares]United StatesTexto completo disponível |
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Material Type: Artigo
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Role of F-center diffusion in the electron-stimulated desorption of metal atoms from alkali halidesLoubriel, GM ; Green, TA ; Richards, PM ; Albridge, RG ; Cherry, DW ; Cole, RK ; Haglund, Jr, RF ; Hudson, LT ; Mendenhall, MH ; Newns, DM ; Savundararaj, PM ; Snowdon, KJ ; Tolk, NHPhysical review letters, 1986-10, Vol.57 (14), p.1781-1784 [Periódico revisado por pares]United StatesTexto completo disponível |
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Material Type: Artigo
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Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ionsNageswara Rao, S. V. S. ; Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 ; Dixit, S. K. ; Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Tennessee TN 37235 ; Luepke, G. ; Tolk, N. H. ; Feldman, L. C. ; Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, Tennessee 37235 ; Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Tennessee TN 37235 ; Institute for Advanced Materials Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08901Physical review. B, Condensed matter and materials physics, 2011-01, Vol.83 (4)United StatesTexto completo disponível |