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Refinado por: Base de dados/Biblioteca: American Physical Society Journals remover assunto: Silicon remover
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1
Lifetimes of hydrogen and deuterium related vibrational modes in silicon
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Lifetimes of hydrogen and deuterium related vibrational modes in silicon

Budde, M ; Lüpke, G ; Chen, E ; Zhang, X ; Tolk, N H ; Feldman, L C ; Tarhan, E ; Ramdas, A K ; Stavola, M

Physical review letters, 2001-10, Vol.87 (14), p.145501-145501 [Periódico revisado por pares]

United States: The American Physical Society

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2
Vibrational lifetime of bond-center hydrogen in crystalline silicon
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Vibrational lifetime of bond-center hydrogen in crystalline silicon

Budde, M ; Lupke, G ; Parks Cheney C ; Tolk, NH ; Feldman, LC

Physical review letters, 2000-08, Vol.85 (7), p.1452-1455 [Periódico revisado por pares]

United States

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3
Effect of energetic ions on the stability of bond-center hydrogen in silicon
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Effect of energetic ions on the stability of bond-center hydrogen in silicon

Nageswara Rao, S. V. S. ; Dixit, S. K. ; Lüpke, G. ; Tolk, N. H. ; Feldman, L. C.

Physical review. B, Condensed matter and materials physics, 2007-06, Vol.75 (23), Article 235202 [Periódico revisado por pares]

United States

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4
Optical Radiation from Low-Energy Ion-Surface Collisions
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Optical Radiation from Low-Energy Ion-Surface Collisions

White, C. W. ; Tolk, N. H.

Physical review letters, 1971-01, Vol.26 (9), p.486-489 [Periódico revisado por pares]

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5
Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions
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Reconfiguration and dissociation of bonded hydrogen in silicon by energetic ions

Nageswara Rao, S. V. S. ; Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 ; Dixit, S. K. ; Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Tennessee TN 37235 ; Luepke, G. ; Tolk, N. H. ; Feldman, L. C. ; Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, Tennessee 37235 ; Vanderbilt Institute of Nanoscale Science and Engineering, Vanderbilt University, Tennessee TN 37235 ; Institute for Advanced Materials Devices and Nanotechnology, Rutgers University, Piscataway, NJ 08901

Physical review. B, Condensed matter and materials physics, 2011-01, Vol.83 (4)

United States

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