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Material Type: Artigo
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Highly Scalable NAND Flash Memory Cell Design Embracing Backside Charge StorageKwon, Wookhyun ; Park, In Jun ; Shin, ChanghwanJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2015, 15(2), 62, pp.286-291대한전자공학회Texto completo disponível |
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Material Type: Artigo
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Low-Complexity Triple-Error-Correcting Parallel BCH DecoderYeon, Jaewoong ; Yang, Seung-Jun ; Kim, Cheolho ; Lee, HanhoJOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2013, 13(5), 53, pp.465-472대한전자공학회Texto completo disponível |
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Material Type: Artigo
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Basis Translation Matrix between Two Isomorphic Extension Fields via Optimal Normal BasisNogami, Yasuyuki ; Namba, Ryo ; Morikawa, YoshitakaETRI Journal, 2008, 30(2), , pp.326-334 [Periódico revisado por pares]한국전자통신연구원Texto completo disponível |