Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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The surface structure of Fe3O4(1 1 1) films as studied by CO adsorptionLEMIRE, C ; MEYER, R ; HENRICH, V. E ; SHAIKHUTDINOV, Sh ; FREUND, H.-JSurface science, 2004-11, Vol.572 (1), p.103-114 [Periódico revisado por pares]Lausanne: Elsevier ScienceTexto completo disponível |
2 |
Material Type: Artigo
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Plasmonically Enhanced Electron Escape from Gold Nanoparticles and Their Polarization-Dependent Excitation Transfer along DNA NanowiresWirth, J ; Garwe, F ; Meyer, R ; Csáki, A ; Stranik, O ; Fritzsche, WNano letters, 2014-07, Vol.14 (7), p.3809-3816 [Periódico revisado por pares]Washington, DC: American Chemical SocietyTexto completo disponível |
3 |
Material Type: Artigo
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Design and characterization of strained InGaAs/GaAsSb type-II 'W' quantum wells on InP substrates for mid-IR emissionHuang, J Y T ; Mawst, L J ; Kuech, T F ; Song, X ; Babcock, S E ; Kim, C S ; Vurgaftman, I ; Meyer, J R ; Holmes, A LJournal of physics. D, Applied physics, 2009-01, Vol.42 (2), p.025108-025108 (8) [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
4 |
Material Type: Artigo
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Application of quantitative mobility-spectrum analysis to multilayer HgCdTe structuresANTOSZEWSKI, J ; FARAONE, L ; VURGAFTMAN, I ; MEYER, J. R ; HOFFMAN, C. AJournal of electronic materials, 2004-06, Vol.33 (6), p.673-683 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
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Material Type: Artigo
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Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InPGrasse, C ; Boehm, G ; Mueller, M ; Gruendl, T ; Meyer, R ; Amann, M-CSemiconductor science and technology, 2010-04, Vol.25 (4), p.045018-045018 [Periódico revisado por pares]Bristol: IOP PublishingTexto completo disponível |
6 |
Material Type: Artigo
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Structural correlation of band-gap modifications induced in mercury telluride by dimensional constraint in single walled carbon nanotubesSloan, J. ; Carter, R. ; Meyer, R. R. ; Vlandas, A. ; Kirkland, A. I. ; Lindan, P. J. D. ; Lin, G. ; Harding, J. ; Hutchison, J. L.Physica Status Solidi (b), 2006-11, Vol.243 (13), p.3257-3262 [Periódico revisado por pares]Berlin: WILEY-VCH VerlagTexto completo disponível |
7 |
Material Type: Artigo
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Investigation of mid-infrared type-II W diode lasersCANEDY, C. L ; BEWLEY, W. W ; LINDLE, J. R ; KIM, C. S ; KIM, M ; VURGAFTMAN, I ; MEYER, J. RJournal of electronic materials, 2006-03, Vol.35 (3), p.453-461 [Periódico revisado por pares]New York, NY: Institute of Electrical and Electronics EngineersTexto completo disponível |
8 |
Material Type: Artigo
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InAsyP1―y metamorphic buffer layers on InP substrates for mid-IR diode lasersKIRCH, Jeremy ; GARROD, Toby ; MEYER, Jerry R ; KUAN, Tung-Sheng ; KIM, Sangho ; PARK, Joo H ; SHIN, Jae C ; MAWST, L. J ; KUECH, T. F ; SONG, X ; BABCOCK, S. E ; VURGAFTMAN, IgorJournal of crystal growth, 2010-04, Vol.312 (8), p.1165-1169 [Periódico revisado por pares]Amsterdam: ElsevierTexto completo disponível |
9 |
Material Type: Artigo
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CO adsorption and thermal stability of Pd deposited on a thin FeO(1 1 1) filmMeyer, R. ; Lahav, D. ; Schalow, T. ; Laurin, M. ; Brandt, B. ; Schauermann, S. ; Guimond, S. ; Klüner, T. ; Kuhlenbeck, H. ; Libuda, J. ; Shaikhutdinov, Sh ; Freund, H.-J.Surface science, 2005-07, Vol.586 (1), p.174-182 [Periódico revisado por pares]Lausanne: Elsevier B.VTexto completo disponível |
10 |
Material Type: Artigo
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MOVPE growth of Ga(As)SbN on GaSb substratesHuang, J.Y.T. ; Mawst, L.J. ; Jha, S. ; Kuech, T.F. ; Wang, D. ; Shterengas, L. ; Belenky, G. ; Meyer, J.R. ; Vurgaftman, I.Journal of crystal growth, 2008-11, Vol.310 (23), p.4839-4842 [Periódico revisado por pares]Amsterdam: Elsevier B.VTexto completo disponível |