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Material Type: Artigo
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Near Volatile and Non-Volatile Memory Processing in 3D SystemsHosseini, Maryam S. ; Ebrahimi, Masoumeh ; Yaghini, Pooria ; Bagherzadeh, NaderIEEE transactions on emerging topics in computing, 2022-07, Vol.10 (3), p.1657-1664 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Radiation Effects in Advanced and Emerging Nonvolatile MemoriesMarinella, Matthew J.IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.546-572 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Magnetic Racetrack Memory: From Physics to the Cusp of Applications Within a DecadeBlasing, Robin ; Khan, Asif Ali ; Filippou, Panagiotis Ch ; Garg, Chirag ; Hameed, Fazal ; Castrillon, Jeronimo ; Parkin, Stuart S. P.Proceedings of the IEEE, 2020-08, Vol.108 (8), p.1303-1321 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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DAMOV: A New Methodology and Benchmark Suite for Evaluating Data Movement BottlenecksOliveira, Geraldo F. ; Gomez-Luna, Juan ; Orosa, Lois ; Ghose, Saugata ; Vijaykumar, Nandita ; Fernandez, Ivan ; Sadrosadati, Mohammad ; Mutlu, OnurIEEE access, 2021, Vol.9, p.134457-134502 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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Material Type: Artigo
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Miss Penalty Aware Cache Replacement for Hybrid Memory SystemsJin, Hai ; Chen, Di ; Liu, Haikun ; Liao, Xiaofei ; Guo, Rentong ; Zhang, YuIEEE transactions on computer-aided design of integrated circuits and systems, 2020-12, Vol.39 (12), p.4669-4682 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Object-Level Memory Allocation and Migration in Hybrid Memory SystemsLiu, Haikun ; Liu, Renshan ; Liao, Xiaofei ; Jin, Hai ; He, Bingsheng ; Zhang, YuIEEE transactions on computers, 2020-09, Vol.69 (9), p.1401-1413 [Periódico revisado por pares]IEEETexto completo disponível |
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Material Type: Artigo
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Hotspot-Aware Hybrid Memory Management for In-Memory Key-Value StoresJin, Hai ; Li, Zhiwei ; Liu, Haikun ; Liao, Xiaofei ; Zhang, YuIEEE transactions on parallel and distributed systems, 2020-04, Vol.31 (4), p.779-792 [Periódico revisado por pares]IEEETexto completo disponível |
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Material Type: Artigo
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Simulations of Ultralow-Power Nonvolatile Cells for Random-Access MemoryLane, Dominic ; Hayne, ManusIEEE transactions on electron devices, 2020-02, Vol.67 (2), p.474-480 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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Material Type: Artigo
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Resistive Switching Device Technology Based on Silicon Oxide for Improved ON-OFF Ratio-Part I: Memory DevicesBricalli, Alessandro ; Ambrosi, Elia ; Laudato, Mario ; Maestro, Marcos ; Rodriguez, Rosana ; Ielmini, DanieleIEEE transactions on electron devices, 2018-01, Vol.65 (1), p.115-121 [Periódico revisado por pares]IEEETexto completo disponível |
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Material Type: Artigo
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Fully On-Chip MAC at 14 nm Enabled by Accurate Row-Wise Programming of PCM-Based Weights and Parallel Vector-Transport in Duration-FormatNarayanan, P. ; Ambrogio, S. ; Okazaki, A. ; Hosokawa, K. ; Tsai, H. ; Nomura, A. ; Yasuda, T. ; Mackin, C. ; Lewis, S. C. ; Friz, A. ; Ishii, M. ; Kohda, Y. ; Mori, H. ; Spoon, K. ; Khaddam-Aljameh, R. ; Saulnier, N. ; Bergendahl, M. ; Demarest, J. ; Brew, K. W. ; Chan, V. ; Choi, S. ; Ok, I. ; Ahsan, I. ; Lie, F. L. ; Haensch, W. ; Narayanan, V. ; Burr, G. W.IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.6629-6636 [Periódico revisado por pares]New York: IEEETexto completo disponível |