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1 |
Material Type: Artigo
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Radiation Effects in Advanced and Emerging Nonvolatile MemoriesMarinella, Matthew J.IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.546-572 [Periódico revisado por pares]New York: IEEETexto completo disponível |
2 |
Material Type: Artigo
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Radiation Effects in Advanced and Emerging Nonvolatile MemoriesMarinella, Matthew J.IEEE transactions on nuclear science, 2021-05, Vol.68 (5) [Periódico revisado por pares]United States: Institute of Electrical and Electronics EngineersTexto completo disponível |
3 |
Material Type: Artigo
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Single Event Effects in 3-D NAND Flash Memory Cells With Replacement Gate TechnologyBagatin, Marta ; Gerardin, Simone ; Paccagnella, Alessandro ; Costantino, Alessandra ; Ferlet-Cavrois, Veronique ; Pesce, Anastasia ; Beltrami, SilviaIEEE transactions on nuclear science, 2023-04, Vol.70 (4), p.308-313 [Periódico revisado por pares]New York: IEEETexto completo disponível |
4 |
Material Type: Artigo
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Ultrahigh Energy Heavy Ion Test Beam on Xilinx Kintex-7 SRAM-Based FPGADu, Boyang ; Sterpone, Luca ; Azimi, Sarah ; Merodio Codinachs, David ; Ferlet-Cavrois, Veronique ; Boatella Polo, Cesar ; Alia, Ruben Garcia ; Kastriotou, Maria ; Fernandez-Martinez, PabloIEEE transactions on nuclear science, 2019-07, Vol.66 (7), p.1813-1819 [Periódico revisado por pares]New York: IEEETexto completo disponível |
5 |
Material Type: Artigo
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Total Ionizing Dose Effects in 3-D NAND Replacement Gate Flash Memory CellsBagatin, Marta ; Gerardin, Simone ; Paccagnella, Alessandro ; Beltrami, SilviaIEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.412-417 [Periódico revisado por pares]New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)Texto completo disponível |
6 |
Material Type: Artigo
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Effects of Heavy-Ion Irradiation on Vertical 3-D NAND Flash MemoriesBagatin, M. ; Gerardin, S. ; Paccagnella, A. ; Beltrami, S. ; Camerlenghi, E. ; Bertuccio, M. ; Costantino, A. ; Zadeh, A. ; Ferlet-Cavrois, V. ; Santin, G. ; Daly, E.IEEE transactions on nuclear science, 2018-01, Vol.65 (1), p.318-325 [Periódico revisado por pares]New York: IEEETexto completo disponível |
7 |
Material Type: Artigo
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Total Ionizing Dose Effects on Physical Unclonable Function From NAND Flash MemorySakib, Sadman ; Raquibuzzaman, Md ; Wasiolek, Maryla ; Hattar, Khalid ; Ray, BiswajitIEEE transactions on nuclear science, 2021-07, Vol.68 (7), p.1445-1453 [Periódico revisado por pares]New York: IEEETexto completo disponível |
8 |
Material Type: Artigo
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Heavy-Ion-Induced Displacement Damage Effects in Magnetic Tunnel Junctions With Perpendicular AnisotropyXiao, T. Patrick ; Bennett, Christopher H. ; Mancoff, Frederick B. ; Manuel, Jack E. ; Hughart, David R. ; Jacobs-Gedrim, Robin B. ; Bielejec, Edward S. ; Vizkelethy, Gyorgy ; Sun, Jijun ; Aggarwal, Sanjeev ; Arghavani, Reza ; Marinella, Matthew J.IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.581-587 [Periódico revisado por pares]New York: IEEETexto completo disponível |
9 |
Material Type: Artigo
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Analysis of SRAM PUF Integrity Under Ionizing Radiation: Effects of Stored Data and Technology NodeSurendranathan, Umeshwarnath ; Wilson, Horace ; Cao, Lei R. ; Milenkovic, Aleksandar ; Ray, BiswajitIEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.485-491 [Periódico revisado por pares]New York: IEEETexto completo disponível |
10 |
Material Type: Artigo
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Total ionizing dose response of 128 analog states in computational charge-trap memoryXiao, T. Patrick ; Wilson, Donald ; Bennett, Christopher H. ; Hughart, David R. ; Feinberg, Ben ; Agrawal, Vineet ; Puchner, Helmut ; Marinella, Matthew J. ; Agarwal, SapanIEEE transactions on nuclear science, 2024-04, Vol.71 (4), p.1-1 [Periódico revisado por pares]New York: IEEETexto completo disponível |