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Material Type: Artigo
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Multi-functional dielectric elastomer artificial muscles for soft and smart machinesAnderson, Iain A. ; Gisby, Todd A. ; McKay, Thomas G. ; O’Brien, Benjamin M. ; Calius, Emilio P.Journal of applied physics, 2012-08, Vol.112 (4) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remediesVerzellesi, Giovanni ; Saguatti, Davide ; Meneghini, Matteo ; Bertazzi, Francesco ; Goano, Michele ; Meneghesso, Gaudenzio ; Zanoni, EnricoJournal of applied physics, 2013-08, Vol.114 (7) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Enhanced dielectric and multiferroic properties of single-phase Y and Zr co-doped BiFeO3 ceramicsXu, Jianlong ; Xie, Dan ; Yin, Cong ; Feng, Tingting ; Zhang, Xiaowen ; Li, Gang ; Zhao, Haiming ; Zhao, Yuanfan ; Ma, Shuo ; Ren, Tian-Ling ; Guan, Yujie ; Gao, Xingsen ; Zhao, YonggangJournal of applied physics, 2013-10, Vol.114 (15) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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A high-performance dielectric elastomer consisting of bio-based polyester elastomer and titanium dioxide powderYang, Dan ; Tian, Ming ; Dong, Yingchao ; Kang, Hailan ; Gong, Daolin ; Zhang, LiqunJournal of applied physics, 2013-10, Vol.114 (15) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistorsChoi, Sukwon ; Heller, Eric ; Dorsey, Donald ; Vetury, Ramakrishna ; Graham, SamuelJournal of applied physics, 2013-10, Vol.114 (16) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Forward current transport mechanisms in Ni/Au-AlGaN/GaN Schottky diodesYan, Dawei ; Jiao, Jinping ; Ren, Jian ; Yang, Guofeng ; Gu, XiaofengJournal of applied physics, 2013-10, Vol.114 (14) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Effect of V-defects on the performance deterioration of InGaN/GaN multiple-quantum-well light-emitting diodes with varying barrier layer thicknessLe, L. C. ; Zhao, D. G. ; Jiang, D. S. ; Li, L. ; Wu, L. L. ; Chen, P. ; Liu, Z. S. ; Yang, J. ; Li, X. J. ; He, X. G. ; Zhu, J. J. ; Wang, H. ; Zhang, S. M. ; Yang, H.Journal of applied physics, 2013-10, Vol.114 (14) [Periódico revisado por pares]Texto completo disponível |
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Material Type: Artigo
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Room temperature ferromagnetism in defective TiO2 nanoparticles: Role of surface and grain boundary oxygen vacanciesChoudhury, Biswajit ; Choudhury, AmarjyotiJournal of applied physics, 2013-11, Vol.114 (20) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
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Material Type: Artigo
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Characterization of interface states in Al2O3/AlGaN/GaN structures for improved performance of high-electron-mobility transistorsHori, Y. ; Yatabe, Z. ; Hashizume, T.Journal of applied physics, 2013-12, Vol.114 (24) [Periódico revisado por pares]Melville: American Institute of PhysicsTexto completo disponível |
10 |
Material Type: Artigo
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Polarization-induced enhancement of photoluminescence in Pr3+ doped ferroelectric diphase BaTiO3-CaTiO3 ceramicsZou, Hua ; Peng, Dengfeng ; Wu, Guangheng ; Wang, Xusheng ; Bao, Dinghua ; Li, Jun ; Li, Yanxia ; Yao, XiJournal of applied physics, 2013-08, Vol.114 (7) [Periódico revisado por pares]Texto completo disponível |