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Refinado por: Nome da Publicação: Journal Of Applied Physics remover assunto: Silicon remover Materials Science remover
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Supersaturating silicon with transition metals by ion implantation and pulsed laser melting
Supersaturating silicon with transition metals by ion implantation and pulsed laser melting
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Supersaturating silicon with transition metals by ion implantation and pulsed laser melting

Recht, Daniel ; Smith, Matthew J. ; Charnvanichborikarn, Supakit ; Sullivan, Joseph T. ; Winkler, Mark T. ; Mathews, Jay ; Warrender, Jeffrey M. ; Buonassisi, Tonio ; Williams, James S. ; Gradečak, Silvija ; Aziz, Michael J.

Journal of applied physics, 2013-09, Vol.114 (12) [Periódico revisado por pares]

United States

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2
On the role of surface plasmon polaritons in the formation of laser-induced periodic surface structures upon irradiation of silicon by femtosecond-laser pulses
On the role of surface plasmon polaritons in the formation of laser-induced periodic surface structures upon irradiation of silicon by femtosecond-laser pulses
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On the role of surface plasmon polaritons in the formation of laser-induced periodic surface structures upon irradiation of silicon by femtosecond-laser pulses

Bonse, Jörn ; Rosenfeld, Arkadi ; Krüger, Jörg

Journal of applied physics, 2009-11, Vol.106 (10), p.104910-104910-5 [Periódico revisado por pares]

United States: American Institute of Physics

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3
Luminescence properties of defects in GaN
Luminescence properties of defects in GaN
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Luminescence properties of defects in GaN

Reshchikov, Michael A. ; Morkoç, Hadis

Journal of applied physics, 2005-03, Vol.97 (6), p.061301-061301-95 [Periódico revisado por pares]

United States: American Institute of Physics

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4
The Seebeck coefficient and phonon drag in silicon
The Seebeck coefficient and phonon drag in silicon
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The Seebeck coefficient and phonon drag in silicon

Mahan, G. D. ; Lindsay, L. ; Broido, D. A.

Journal of applied physics, 2014-12, Vol.116 (24) [Periódico revisado por pares]

Melville: American Institute of Physics

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5
Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon
Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon
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Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon

Derrien, Thibault J.-Y. ; Itina, Tatiana E. ; Torres, Rémi ; Sarnet, Thierry ; Sentis, Marc

Journal of applied physics, 2013-08, Vol.114 (8) [Periódico revisado por pares]

United States: American Institute of Physics

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6
In situ measurements of non-equilibrium positron state defects during He irradiation in Si
In situ measurements of non-equilibrium positron state defects during He irradiation in Si
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In situ measurements of non-equilibrium positron state defects during He irradiation in Si

Auguste, R. ; Liedke, M. O. ; Butterling, M. ; Uberuaga, B. P. ; Selim, F. A. ; Wagner, A. ; Hosemann, P.

Journal of applied physics, 2023-05, Vol.133 (18) [Periódico revisado por pares]

Melville: American Institute of Physics

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7
Thermal conductivity of strained silicon: Molecular dynamics insight and kinetic theory approach
Thermal conductivity of strained silicon: Molecular dynamics insight and kinetic theory approach
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Thermal conductivity of strained silicon: Molecular dynamics insight and kinetic theory approach

Kuryliuk, Vasyl ; Nepochatyi, Oleksii ; Chantrenne, Patrice ; Lacroix, David ; Isaiev, Mykola

Journal of applied physics, 2019-08, Vol.126 (5) [Periódico revisado por pares]

Melville: American Institute of Physics

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8
Field emission from vertically aligned few-layer graphene
Field emission from vertically aligned few-layer graphene
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Field emission from vertically aligned few-layer graphene

Malesevic, Alexander ; Kemps, Raymond ; Vanhulsel, Annick ; Chowdhury, Manish Pal ; Volodin, Alexander ; Van Haesendonck, Chris

Journal of applied physics, 2008-10, Vol.104 (8), p.084301-084301-5 [Periódico revisado por pares]

United States: American Institute of Physics

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9
Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon
Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon
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Influence of hydrogen effusion from hydrogenated silicon nitride layers on the regeneration of boron-oxygen related defects in crystalline silicon

Wilking, S. ; Ebert, S. ; Herguth, A. ; Hahn, G.

Journal of applied physics, 2013-11, Vol.114 (19) [Periódico revisado por pares]

Melville: American Institute of Physics

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10
The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells
The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells
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The role of amorphous silicon and tunneling in heterojunction with intrinsic thin layer (HIT) solar cells

Kanevce, Ana ; Metzger, Wyatt K.

Journal of applied physics, 2009-05, Vol.105 (9), p.094507-094507-7 [Periódico revisado por pares]

United States: American Institute of Physics

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