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Refinado por: assunto: Circuitos Integrados remover
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1
Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures
Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Study of the deep-submicron SOI MOSFET leakage current behavior at high temperatures

Marcello Bellodi Benjamin Iniguez; Cristine Raynaud; Denis Flandre; João Antonio Martino 1959-; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000: proceedings Manaus : SBMicro/UA/UFGRS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

Item não circula. Consulte sua biblioteca.(Acessar)

2
Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C
Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Diodes model for the leakage drain current in enhancement-mode SOI nMOSFETs at 300 GRAUS C

Marcello Bellodi Benjamin Iniguez; Denis Flandre; João Antonio Martino 1959-; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000 : proceedings Manaus : SBMicro/UA/UFRGS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

Item não circula. Consulte sua biblioteca.(Acessar)

3
Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications
Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Modeling of the leakage drain current in accumulation mode SOI pMOSFETs for high-temperature applications

Marcello Bellodi Benjamin Iniguez; Denis Flandre; João Antonio Martino 1959-; International Symposium on Silicon-on-Insulator Technology and Devices (10. 2001 Washington, DC)

Proceedings Pennington : The Electrochemical Society, 2001

Pennington The Electrochemical Society 2001

Item não circula. Consulte sua biblioteca.(Acessar)

4
A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC
A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

A simple leakage drain current model for accumulation-mode SOI pMOSFETs operating up to 300ºC

Marcello Bellodi Benjamin Iniguez; Denis Flandre; João Antonio Martino 1959-; International Conference on Microelectronics and Packaging (16. 2001 Pirenópolis)

SBMicro 2001: proceedings Brasília : SBMicro, 2001

Brasília SBMicro 2001

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Iniguez, B
  2. Flandre, D
  3. Martino, J
  4. Bellodi, M
  5. International Conference on Microelectronics and Packaging

Neste Assunto:

  1. Circuitos Integrados

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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