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1
Sidewall angle influence on the finFET analog parameters
Sidewall angle influence on the finFET analog parameters
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Sidewall angle influence on the finFET analog parameters

Renato Camargo Giacomini João Antonio Martino 1959-; Marcelo Antonio Pavanello; International Symposium on Microelectronics Technology and Devices SBMICRO (22. (2007 Rio de Janeiro, RJ); Symposium on Integrated Circuits and Systems Design (20. 2007 Rio de Janeiro, RJ); Microelectronics Students Forum (7. 2007 Rio de Janeiro, RJ)

SBMicro 2007

Pennington The Electrochemical Society 2007

Item não circula. Consulte sua biblioteca.(Acessar)

2
Influence of the N-type finFET width on the zero temperature coefficient
Influence of the N-type finFET width on the zero temperature coefficient
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Influence of the N-type finFET width on the zero temperature coefficient

Marcello Bellodi João Antonio Martino 1959-; Luciano Mendes Camillo; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (22. (2007 Rio de Janeiro, RJ); Symposium on Integrated Circuits and Systems Design (20. 2007 Rio de Janeiro, RJ); Microelectronics Students Forum (7. 2007 Rio de Janeiro, RJ)

SBMicro 2007

Pennington The Electrochemical Society 2007

Item não circula. Consulte sua biblioteca.(Acessar)

3
The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs
The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs
Material Type:
Livro 		Adicionar ao Meu Espaço

The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs

Luciano Mendes Camillo João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

4
Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k

Marcelo Antonio Pavanello João Antonio Martino 1959-; Congress of the Brazilian Microelectronics Society (10. 1995 Canela); Ibero-American Microelectronics Conference (1. 1995 Canela)

Proceedings Porto Alegre : Instituto de Informatica da Ufrgs, 1995

Porto Alegre Instituto de Informatica da Ufrgs 1995

Item não circula. Consulte sua biblioteca.(Acessar)

5
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs

Milene Galeti João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington: The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

6
Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
Material Type:
Livro 		Adicionar ao Meu Espaço

Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications

Marcelo Antonio Pavanello Antonio Cerdeira; Miguel A Alemán; João Antonio Martino 1959-; Laurent Vancaillie; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)

Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

7
Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs

Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Rita Rooyackers; Nadine Collaert; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (2008 Gramado, RS)

SBMICRO 2008: Anais Pennington: The Electrochemical Society, 2008

Pennington The Electrochemical Society 2008

Item não circula. Consulte sua biblioteca.(Acessar)

8
Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET
Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Influence of the back interface accumulation on the interface traps density extraction in thin film SOI nMOSFET

Victor Sonnenberg João Antonio Martino 1959-; Conference of the Brazilian Microelectronics Society (12. 1997 Caxambu)

Proceedings Itajubá : SBMICRO/EFEI, 1997

Itajubá SBMICRO/EFEI 1997

Item não circula. Consulte sua biblioteca.(Acessar)

9
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET

A.G. Paiola Aparecido Sirley Nicolett; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)

Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08

Pennington The Electrochemical Society 2005

Item não circula. Consulte sua biblioteca.(Acessar)

10
Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence
Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence
Material Type:
Artigo de Congresso 		Adicionar ao Meu Espaço

Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence

Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Conference on Microelectronics and Packaging (15. 2000 Manaus)

SBMicro 2000 : proceedings Manaus : SBMicro/UA/UFRGS/UNICAMP/USP, 2000

Manaus SBMicro/UA/UFRGS/UNICAMP/USP 2000

Item não circula. Consulte sua biblioteca.(Acessar)

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Deste Autor:

  1. Martino, J
  2. Claeys, C
  3. Simoen, E
  4. Agopian, P
  5. Nicolett, A

Neste Assunto:

  1. Microeletrônica
  2. Transistores
  3. Semicondutores
  4. Soi
  5. Circuitos Integrados

  • Realização: ABCD-USP USP   Logos de Redes Sociais: Freepik

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