Sidewall angle influence on the finFET analog parameters
Renato Camargo Giacomini João Antonio Martino 1959-; Marcelo Antonio Pavanello; International Symposium on Microelectronics Technology and Devices SBMICRO (22. (2007 Rio de Janeiro, RJ); Symposium on Integrated Circuits and Systems Design (20. 2007 Rio de Janeiro, RJ); Microelectronics Students Forum (7. 2007 Rio de Janeiro, RJ)
SBMicro 2007
Pennington The Electrochemical Society 2007
Item não circula. Consulte sua biblioteca.(Acessar)
Influence of the N-type finFET width on the zero temperature coefficient
Marcello Bellodi João Antonio Martino 1959-; Luciano Mendes Camillo; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (22. (2007 Rio de Janeiro, RJ); Symposium on Integrated Circuits and Systems Design (20. 2007 Rio de Janeiro, RJ); Microelectronics Students Forum (7. 2007 Rio de Janeiro, RJ)
SBMicro 2007
Pennington The Electrochemical Society 2007
Item não circula. Consulte sua biblioteca.(Acessar)
The temperature mobility degradation influence on the ZTC of PD and FD SOI MOSFETs
Luciano Mendes Camillo João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)
Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005
Pennington The Electrochemical Society 2005
Item não circula. Consulte sua biblioteca.(Acessar)
Influence of the substrate potential drop on fully depleted soi mesfet threshold voltage at 77k
Marcelo Antonio Pavanello João Antonio Martino 1959-; Congress of the Brazilian Microelectronics Society (10. 1995 Canela); Ibero-American Microelectronics Conference (1. 1995 Canela)
Proceedings Porto Alegre : Instituto de Informatica da Ufrgs, 1995
Porto Alegre Instituto de Informatica da Ufrgs 1995
Item não circula. Consulte sua biblioteca.(Acessar)
Temperature and oxide thickness influence on the generation lifetime determination in partially depleted SOI nMOSFETs
Milene Galeti João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)
Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington: The Electrochemical Society, 2005. Proceedings v. 2005-08
Pennington The Electrochemical Society 2005
Item não circula. Consulte sua biblioteca.(Acessar)
Low temperature and channel engineering influence on harmonic distortion of soi nmosfets for analog applications
Marcelo Antonio Pavanello Antonio Cerdeira; Miguel A Alemán; João Antonio Martino 1959-; Laurent Vancaillie; Denis Flandre; International Symposium on Silicon-on-Insulator Technology and Devices (12 2005 Quebec, Canada)
Celler,G.K; Cristoloveanu, S.; Gámiz, F.; Fossum, J.G.; Izumi, K. International Symposium on Silicon-on-Insulator Technology and Devices XII: proceedings Pennington: The Electrochemical Society, 2005
Pennington The Electrochemical Society 2005
Item não circula. Consulte sua biblioteca.(Acessar)
Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs
Marcelo Antonio Pavanello João Antonio Martino 1959-; Eddy Simoen; Rita Rooyackers; Nadine Collaert; Cor Claeys; International Symposium on Microelectronics Technology and Devices SBMICRO (2008 Gramado, RS)
SBMICRO 2008: Anais Pennington: The Electrochemical Society, 2008
Pennington The Electrochemical Society 2008
Item não circula. Consulte sua biblioteca.(Acessar)
Influence of the gate oxide tunneling effect on the extraction of the silicon film and front oxide thickness in SOI nMOSFET
A.G. Paiola Aparecido Sirley Nicolett; João Antonio Martino 1959-; International Symposium on Microelectronics Technology and Devices SBMICRO (20. 2005 Florianópolis)
Claeys, C.; Swart, J. W.; Morimoto, N. I.; Verdonck, P., eds. Microelectronics Technology and Devices SBMICRO 2005 Pennington : The Electrochemical Society, 2005. Proceedings v. 2005-08
Pennington The Electrochemical Society 2005
Item não circula. Consulte sua biblioteca.(Acessar)
Extraction of the silicon film trickness on fully depleted SOI nMOSFETs using the back gate voltage influence
Aparecido Sirley Nicolett João Antonio Martino 1959-; Eddy Simoen; Cor Claeys; International Conference on Microelectronics and Packaging (15. 2000 Manaus)