Result Number | Material Type | Add to My Shelf Action | Record Details and Options |
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1 |
Material Type: Artigo
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gm/Id Analysis of vertical nanowire III–V TFETsRangasamy, Gautham ; Zhu, Zhongyunshen ; Ohlsson Fhager, Lars ; Wernersson, Lars-ErikElectronics letters, 2023-09, Vol.59 (18) [Periódico revisado por pares]Texto completo disponível |
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2 |
Material Type: Artigo
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Demonstration of a Transportable Fabry-Pérot Refractometer by a Ring-Type Comparison of Dead-Weight Pressure Balances at Four European National Metrology InstitutesForssén, Clayton ; Silander, Isak ; Zakrisson, Johan ; Amer, Eynas ; Szabo, David ; Bock, Thomas ; Kussike, André ; Rubin, Tom ; Mari, Domenico ; Pasqualin, Stefano ; Silvestri, Zaccaria ; Bentouati, Djilali ; Axner, Ove ; Zelan, MartinSensors (Basel, Switzerland), 2024-01, Vol.24 (1), p.7 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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3 |
Material Type: Artigo
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Energy Stored by Radiating SystemsSchab, Kurt ; Jelinek, Lukas ; Capek, Miloslav ; Ehrenborg, Casimir ; Tayli, Doruk ; Vandenbosch, Guy A. E. ; Gustafsson, MatsIEEE access, 2018-01, Vol.6, p.10553-10568 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |
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4 |
Material Type: Artigo
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Optimal frequency combination estimation for accurate ultrasound non-destructive testingKumar, A ; Shakya, S ; Goswami, MElectronics letters, 2020-09, Vol.56 (19), p.1022-1024 [Periódico revisado por pares]The Institution of Engineering and TechnologyTexto completo disponível |
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5 |
Material Type: Artigo
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Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETsKilpi, Olli-Pekka ; Svensson, Johannes ; Lind, Erik ; Wernersson, Lars-ErikIEEE journal of the Electron Devices Society, 2019, Vol.7, p.70-75 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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6 |
Material Type: Artigo
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III-V Heterostructure Nanowire Tunnel FETsLind, Erik ; Memisevic, Elvedin ; Dey, Anil W. ; Wernersson, Lars-ErikIEEE journal of the Electron Devices Society, 2015-05, Vol.3 (3), p.96-102 [Periódico revisado por pares]IEEETexto completo disponível |
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7 |
Material Type: Artigo
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Ultra-Scaled AlOx Diffusion Barriers for Multibit HfOx RRAM OperationPersson, Karl-Magnus ; Ram, Mamidala Saketh ; Wernersson, Lars-ErikIEEE journal of the Electron Devices Society, 2021-01, Vol.9, p.564-569 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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8 |
Material Type: Artigo
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A Method for Determining Trap Distributions of Specific Channel Surfaces in InGaAs Tri-Gate MOSFETsNetsu, Seiko ; Hellenbrand, Markus ; Zota, Cezar B. ; Miyamoto, Yasuyuki ; Lind, ErikIEEE journal of the Electron Devices Society, 2018-01, Vol.6, p.408-412 [Periódico revisado por pares]New York: IEEETexto completo disponível |
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9 |
Material Type: Artigo
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5G SLAM Using the Clustering and Assignment Approach with Diffuse MultipathGe, Yu ; Wen, Fuxi ; Kim, Hyowon ; Zhu, Meifang ; Jiang, Fan ; Kim, Sunwoo ; Svensson, Lennart ; Wymeersch, HenkSensors (Basel, Switzerland), 2020-08, Vol.20 (16), p.4656 [Periódico revisado por pares]Switzerland: MDPI AGTexto completo disponível |
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10 |
Material Type: Artigo
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The World's First Real-Time Testbed for Massive MIMO: Design, Implementation, and ValidationMalkowsky, Steffen ; Vieira, Joao ; Liang Liu ; Harris, Paul ; Nieman, Karl ; Kundargi, Nikhil ; Wong, Ian C. ; Tufvesson, Fredrik ; Owall, Viktor ; Edfors, OveIEEE access, 2017-01, Vol.5, p.9073-9088 [Periódico revisado por pares]Piscataway: IEEETexto completo disponível |